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This book describes advanced high frequency power MOSFET gate driver technologies, which serve a critical role between control and power devices. A gate driver is a power amplifier that accepts a low-power input from a controller integrated circuit and produces a high-current drive input for the gate of a high-power transistor such as a power MOSFET (metal-oxide-semiconductor field-effect transistor).
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​
The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems.For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems.This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters. Every developed stage regarding the GDs is validated through tests and experimental studies. In addition, the developed GDs are applied to converters for wireless charging systems of electric vehicle batteries. The results show the effectiveness of the proposed GDs and their viability in power converters based on SiC MOSFET devices.
This book presents the select proceedings of the International Conference on Automation, Signal Processing, Instrumentation and Control (i-CASIC) 2020. The book mainly focuses on emerging technologies in electrical systems, IoT-based instrumentation, advanced industrial automation, and advanced image and signal processing. It also includes studies on the analysis, design and implementation of instrumentation systems, and high-accuracy and energy-efficient controllers. The contents of this book will be useful for beginners, researchers as well as professionals interested in instrumentation and control, and other allied fields.
The development trend of power converters motivates the pursuit with high density, high efficiency, and low cost. Increasing the frequency can improve the power density and lead to small passive elements and a fast dynamic response. Each one of these power converters must be driven by a gate-drive circuit to operate efficiently. Conventional gate-drivers are used up to frequencies of about 5 MHz and suffer from switching losses. Therefore, the development of switch-mode power supplies (SMPS) operating at high frequencies requires high-speed gate drivers. The presented research in this dissertation focuses on analysis, design, and development of new types of resonant gate-drive circuits to drive power transistors at high frequencies. Three proposed topologies are presented in this dissertation. Two topologies are single-switch ZVS gate-drive circuits. The attractive features of the two circuits are : (a) suitable to drive a low-side power transistor, (b) capable of operating at high frequencies with quick turn-on and turn-off transitions, (c) low power loss due to zero-voltage switching in the driving switch, (d) a significant increase in gate-source voltage of the driven switch with respect to the input voltage, (e) small energy storage components, and (f) designed to operate at switching frequency 20 MHz and a supply voltage of 4 V. The third presented topology is a class-D resonant gate-drive circuit. A series resonant circuit is formed by the resonant inductor and the input capacitance of the MOSFET to achieve the charge and discharge process of the transistor input capacitance. The proposed circuit can be used as a gate-drive circuit to drive low-side or high-side power switches operating at 6.78 MHz. In each above topology, detailed steady-state operation and derived expressions for the steady-state waveforms are presented. The analysis includes predicted power loss expressions in circuit components to estimate the overall losses in the gate-drive circuits. A design procedure of the proposed gate drivers is developed. The simulations and experimental results are given to validate the theoretical analysis.Finally, in the last chapter of the dissertation, the behavior of an air-core inductor operating at high frequencies is investigated. An appropriate model for the inductor is introduced to represent the effect of high frequencies on the inductor's winding resistance. The analysis includes an expression to estimate the power loss in the air-core inductor. A detailed design methodology is presented to predict the dc and ac characteristic of the air-core inductor. A design example of an air-core inductor is given for switch-mode power gate driver operating at high frequencies.
Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. Power electronics has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applications. * 25% new content* Reorganized and revised into 8 sections comprising 43 chapters* Coverage of numerous applications, including uninterruptable power supplies and automotive electrical systems* New content in power generation and distribution, including solar power, fuel cells, wind turbines, and flexible transmission