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High Excitation and Short Pulse Phenomena contains the proceeding of the Third Trieste ICTP-IUPAP Semiconductor Symposium on ""High Excitation and Short Pulse Phenomena"", held at the International Center for Theoretical Physics, Trieste, Italy on July, 2-6 1984. This book contains the keynote papers of the symposium and the contributions from the participants. It describes the non-equilibrium electron-hole plasmas in direct and indirect gap semiconductors; transport of plasmas and of hot carriers; and expansion velocities. The book also elucidates the screening effects involved in the exciton-plasma transition; the optical bistability and nonlinearity; and experimental techniques with short pulse spectroscopy. Other topics emphasized are the physical aspects of laser annealing and of melting at the highest excitation levels, as well as the results of high excitation and short pulse physics of quantum wells. The fast relaxation processes, as well as the carrier-carrier and carrier-phonon interactions are also explained. This material will serve as a source of information and reference, and will stimulate ways for further research.
Ultrashort Laser Pulse Phenomena, Second Edition serves as an introduction to the phenomena of ultra short laser pulses and describes how this technology can be used to examine problems in areas such as electromagnetism, optics, and quantum mechanics. Ultrashort Laser Pulse Phenomena combines theoretical backgrounds and experimental techniques and will serve as a manual on designing and constructing femtosecond ("faster than electronics") systems or experiments from scratch. Beyond the simple optical system, the various sources of ultrashort pulses are presented, again with emphasis on the basic concepts and how they apply to the design of particular sources (dye lasers, solid state lasers, semiconductor lasers, fiber lasers, and sources based on frequency conversion). - Provides an easy to follow guide through "faster than electronics" probing and detection methods - THE manual on designing and constructing femtosecond systems and experiments - Discusses essential technology for applications in micro-machining, femtochemistry, and medical imaging
This Briefs volume describes the properties and structure of elementary excitations in isotope low-dimensional structures. Without assuming prior knowledge of quantum physics, the present book provides the basic knowledge needed to understand the recent developments in the sub-disciplines of nanoscience isotopetronics, novel device concepts and materials for nanotechnology. It is the first and comprehensive interdisciplinary account of the newly developed scientific discipline isotopetronics.
The present book provides to the main ideas and techniques of the rapid progressing field of quantum information and quantum computation using isotope - mixed materials. It starts with an introduction to the isotope physics and then describes of the isotope - based quantum information and quantum computation. The ability to manipulate and control electron and/or nucleus spin in semiconductor devices provides a new route to expand the capabilities of inorganic semiconductor-based electronics and to design innovative devices with potential application in quantum computing. One of the major challenges towards these objectives is to develop semiconductor-based systems and architectures in which the spatial distribution of spins and their properties can be controlled. For instance, to eliminate electron spin decoherence resulting from hyperfine interaction due to nuclear spin background, isotopically controlled devices are needed (i.e., nuclear spin-depleted). In other emerging concepts, the control of the spatial distribution of isotopes with nuclear spins is a prerequisite to implement the quantum bits (or qbits). Therefore, stable semiconductor isotopes are important elements in the development of solid-state quantum information. There are not only different algorithms of quantum computation discussed but also the different models of quantum computers are presented. With numerous illustrations this small book is of great interest for undergraduate students taking courses in mesoscopic physics or nanoelectronics as well as quantum information, and academic and industrial researches working in this field.
This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The book ́s main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
The Winter School held in Les Houches on March 12-21, 1985 was devoted to Semiconductor Heterojunctions and Superlattices, a topic which is recognized as being now one of the most interesting and active fields in semiconductor physics. In fact, following the pioneering work of Esaki and Tsu in 1970, the study of these two-dimensional semiconductor heterostructures has developed rapidly, both from the point of view of basic physics and of applications. For instance, modulation-doped heterojunctions are nowadays currently used to investigate the quantum Hall effect and to make very fast transistors. This book contains the lectures presented at this Winter School, showing in particular that many aspects of semiconductor heterojunctions and super lattices were treated, extending from the fabrication of these two-dimensional systems to their basic properties and applications in micro-and opto-electron ics. Among the subjects which were covered, one can quote as examples: molecular beam epitaxy and metallorganic chemical vapor deposition of semi conductor compounds; band structure of superlattices; properties of elec trons in heterojunctions, including the fractional quantum Hall effect; opti cal properties of two-dimensional heterostructures; quantum well lasers; and two-dimensional electron gas field effect transistors. It is clear that two-dimensional semiconductor systems are raising a great deal of interest in many industrial and university laboratories. From the number of applications which were received and from the reactions of the participants, it can certainly be asserted that this School corresponded to a need and came at the right time.
Laser processing is now a rapidly increasing field with many real and potential applications in different areas of technology such as micromecha nics, metallurgy, integrated optics, and semiconductor device fabrication. The neces s ity for such soph i st i cated 1 i ght sources as 1 asers is based on the spatial coherence and the monochromaticity of laser light. The spatial coherence permits extreme focussing of the laser light resulting in the availability of high energy densities which can be used for strongly loca lized heat- and chemical-treatment of materials, with a resolution down to 1 ess than 1 lJIll. When us i ng pul sed or scanned cw-l asers, 1 oca 1 i zat i on in time is also possible. Additionally, the monochromaticity of laser light allows for control of the depth of heat treatment and/or selective, nonthermal bond breaking - within the surface of the material or within the molecules of the surrounding reactive atmosphere - simply by tuning the laser wavelength. These inherent advantages of laser light permit micromachining of materials (drilling, cutting, welding etc.) and also allow single-step controlled area processing of thin films and surfaces. Processes include structural transformation (removal of residual damage, grain growth in polycrystalline material, amorphization, surface hardening etc.), etching, doping, alloying, or deposition. In addition, laser processing is not 1 imited to planar substrates.