Download Free Hierarchical Device Simulation Book in PDF and EPUB Free Download. You can read online Hierarchical Device Simulation and write the review.

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
Composite systems that integrate microelectromechanical and microelectrofluidic (MEF) components with electronics are emerging as the next generation of system-on-a-chip (SOC) designs. However, there remains a pressing need for a structured methodology for MEFS design automation, including modeling techniques and simulation and optimization tools. Integrating top-down and bottom-up design philosophies, Microelectrofluidic Systems presents the first comprehensive design strategy for MEFS. This strategy supports hierarchical modeling and simulation from the component level to the system level. It leads to multi-objective optimization tools valuable in all phases of the design process, from conceptualization to final manufacturing. The authors begin by defining the basic variables and elements needed to describe MEFS behavior, then model that behavior across three layers of abstraction: the low-level component, high-level reconfigurable architecture, and bio/chemical application layers. They have developed a hierarchical integrated design environment with SystemC and present its architecture and associated functional packages. Microelectrofluidic Systems is visionary in its leverage of electronic design principles for microsystem design and heralds a new era of automated SOC design. The strategy it presents holds the potential for significant reductions in design time and life-cycle maintenance costs, and its techniques and tools for robust design and application flexibility can lead to the high-volume production needed for the inevitably growing product market.
This book describes a new design methodology that allows optimization-based synthesis of RF systems in a hierarchical multilevel approach, in which the system is designed in a bottom-up fashion, from the device level up to the (sub)system level. At each level of the design hierarchy, the authors discuss methods that increase the design robustness and increase the accuracy and efficiency of the simulations. The methodology described enables circuit sizing and layout in a complete and automated integrated manner, achieving optimized designs in significantly less time than with traditional approaches.
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.