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The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
This book highlights the latest advances in chemical and physical methods for thin-film deposition and surface engineering, including ion- and plasma-assisted processes, focusing on explaining the synthesis/processing–structure–properties relationship for a variety of thin-film systems. It covers topics such as advances in thin-film synthesis; new thin-film materials: diamond-like films, granular alloys, high-entropy alloys, oxynitrides, and intermetallic compounds; ultra-hard, wear- and oxidation-resistant and multifunctional coatings; superconducting, magnetic, semiconducting, and dielectric films; electrochemical and electroless depositions; thin-film characterization and instrumentation; and industrial applications.
Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion. The potential applications of these particular nano-objects is also discussed, with regards to their eventual integration in biology, energy and electronics.
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Packaging materials, assembly processes, and the detailed understanding of multilayer mechanics have enabled much of the progress in miniaturization, reliability, and functional density achieved by modern electronic, microelectronic, and nanoelectronic products. The design and manufacture of miniaturized packages, providing low-loss electrical and/or optical communication, while protecting the semiconductor chips from environmental stresses and internal power cycling, require a carefully balanced selection of packaging materials and processes. Due to the relative fragility of these semiconductor chips, as well as the underlying laminated substrates and the bridging interconnect, selection of the packaging materials and processes is inextricably bound with the mechanical behavior of the intimately packaged multilayer structures, in all phases of development for traditional, as well as emerging, electronic product categories.The Encyclopedia of Packaging Materials, Processes, and Mechanics, compiled in 8, multi-volume sets, provides comprehensive coverage of the configurations and techniques, assembly materials and processes, modeling and simulation tools, and experimental characterization and validation techniques for electronic packaging. Each of the volumes presents the accumulated wisdom and shared perspectives of leading researchers and practitioners in the packaging of electronic components. The Encyclopedia of Packaging Materials, Processes, and Mechanics will provide the novice and student with a complete reference for a quick ascent on the packaging 'learning curve,' the practitioner with a validated set of techniques and tools to face every challenge in packaging design and development, and researchers with a clear definition of the state-of-the-art and emerging needs to guide their future efforts. This encyclopedia will, thus, be of great interest to packaging engineers, electronic product development engineers, and product managers, as well as to researchers in the assembly and mechanical behavior of electronic and photonic components and systems. It will be most beneficial to undergraduate and graduate students studying materials, mechanical, electrical, and electronic engineering, with a strong interest in electronic packaging applications.
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.