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This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
This volume provides the readers an in-depth, yet concise, overview of the physico-chemical structures, luminescence and related properties of II-VI compounds which are being utilised and exhaustively studied these days for their applications in LED's, modern optoelectronic devices, flat EL screens and panels, infrared detectors, photovoltaic and thermal solar energy converters etc. The book, therefore, should be useful to a wide variety of people (working in the field of luminescence and related properties of II-VI compounds, i.e. advanced graduate students) and serve as a review to researchers entering in this field and working on these materials. It should also be useful to solid state spectroscopists, lasers physicists; electronic and illuminating engineering people, and all those professionals using these materials.
This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in related areas of II-VI materials research. The motivation for preparing this book originated from the need for a current review of this fertile and important field. A primary goal of this book is therefore to present an eclectic synthesis of these sometimes diverse fields of investigation. This book consists of three main sections, namely (1) Growth and Properties, (2) Materials Characterization and (3) Devices. Part One presents an overall perspective of the state of the art in the preparation of the widegap II-VI materials. Part Two concentrates on current topics pertinent to the characterization of these materials from the unique perspective of each of the authors. Part Three focuses on advances in the opto-electronic applications of these materials. The material in this section runs the gamut from addressing recent advances in device areas which date back to some of the earliest reported research in these materials, to tackling some quite new and exciting future directions.
This book contains all the papers presented at the NATO workshop on "Optical Switching in Low Dimensional Systems" held in Marbella, Spain from October 6th to 8th, 1988. Optical switching is a basic function for optical data processing, which is of technological interest because of its potential parallelism and its potential speed. Semiconductors which exhibit resonance enhanced optical nonlinearities in the frequency range close to the band edge are the most intensively studied materials for optical bistability and fast gate operation. Modern crystal growth techniques, particularly molecular beam epitaxy, allow the manufacture of semiconductor microstructures such as quantum wells, quantum wires and quantum dots in which the electrons are only free to move in two, one or zero dimensions, of the optically excited electron-hole pairs in these low respectively. The spatial confinement dimensional structures gives rise to an enhancement of the excitonic nonlinearities. Furthermore, the variations of the microstruture extensions, of the compositions, and of the doping offer great new flexibility in engineering the desired optical properties. Recently, organic chain molecules (such as polydiacetilene) which are different realizations of one dimensional electronic systems, have been shown also to have interesting optical nonlinearities. Both the development and study of optical and electro-optical devices, as well as experimental and theoretical investigations of the underlying optical nonlinearities, are contained in this book.
Semiconductors with optical characteristics have found widespread use in evolving semiconductor photovoltaics, where optical features are important. The industrialization of semiconductors and their allied applications have paved the way for optical measurement techniques to be used in new ways. Due to their unique properties, semiconductors are key components in the daily employed technologies in healthcare, computing, communications, green energy, and a range of other uses. This book examines the fundamental optical properties and applications of semiconductors. It summarizes the information as well as the optical characteristics and applicability of semiconductors through an in-depth review of the literature. Accomplished experts in the field share their knowledge and examine new developments. FEATURES Comprehensive coverage of all types of optical applications using semiconductors Explores relevant composite materials and devices for each application Addresses the optical properties of crystalline and amorphous semiconductors Describes new developments in the field and future potential applications Optical Properties and Applications of Semiconductors is a comprehensive reference and an invaluable resource for engineers, scientists, academics, and industry R&D teams working in applied physics.
Historically, black body radiation in the tungsten filament lamp was our primary industrial means for producing 'artificial' light, as it replaced gas lamps. Solid state luminescent devices for applications ranging from lamps to displays have proliferated since then, particularly owing to the develop ment of semiconductors and phosphors. Our lighting products are now mostly phosphor based and this 'cold light' is replacing an increasing fraction of tungsten filament lamps. Even light emitting diodes now chal lenge such lamps for automotive brake lights. In the area of information displays, cathode ray tube phosphors have proved themselves to be outstandingly efficient light emitters with excellent colour capability. The current push for flat panel displays is quite intense, and much confusion exists as to where development and commercialization will occur most rapidly, but with the need for colour, it is now apparent that solid state luminescence will play a primary role, as gas phase plasma displays do not conveniently permit colour at the high resolution needed today. The long term challenge to develop electroluminescent displays continues, and high performance fluorescent lamps currently illuminate liquid crystal monochrome and colour displays. The development of tri component rare earth phosphors is of particular importance.
Contents: X-Ray Characterisation of II-VI Semiconductor Materials (D Gao et al.)Electronic Structure of II-VI Semiconductors and Their Alloys (S-H Wei)Radiative Recombination Processes in Rare Earth Doped II-VI Materials (M Godlewski et al.)Nonlinear Optical Properties of Heavily Doped CdS (U Neukirch)Nanostructures of Broad Gap (II,Mn) VI Semiconductors (W Heimbrodt & O Goede)Co-Based II-VI Semimagnetic Semiconductors (A Twardowski et al.)Photoluminescence and Raman Scattering of ZnSe-ZnTe Strained Layer Superlattices (K Kumazaki)Novel Electronic Processes in Mercury-Based Superlattices (J R Meyer et al.)Strain, Pressure and Piezoelectric Effects in Strained II-VI Superlattices and Heterostructures (E Anastassakia)Electronic Structures of Strained II-VI Superlattices (T Nakayama)Devices and Applications of II-VI Compounds (S Colak)Solar Cells Based on II-VI Semiconductors (H Uda)ZnSe and Its Applications for Blue-Light Laser Diodes (M Pessa & D Ahn)Molecular Beam Epitaxy of HgCdTe for Electro-Optical Infrared Applications (J M A Cortés)and other papers Readership: Condensed matter physicists and electronic engineers. keywords:
This volume represents the written account of the NATO Advanced Study Institute "Lower-Dimensional Systems and Molecular Electronics" held at Hotel Spetses, Spetses Island, Greece from 12 June to 23 June 1989. The goal of the Institute was to demonstrate the breadth of chemical and physical knowledge that has been acquired in the last 20 years in inorganic and organic crystals, polymers, and thin films, which exhibit phenomena of reduced dimensionality. The interest in these systems started in the late 1960's with lower-dimensional inorganic conductors, in the early 1970's with quasi-one-dimensional crystalline organic conductors. which by 1979 led to the first organic superconductors, and, in 1977, to the fITSt conducting polymers. The study of monolayer films (Langmuir-Blodgett films) had progressed since the 1930's, but reached a great upsurge in . the early 1980's. The pursuit of non-linear optical phenomena became increasingly popular in the early 1980's, as the attention turned from inorganic crystals to organic films and polymers. And in the last few years the term "moleculw' electronics" has gained ever-increasing acceptance, although it is used in several contexts. We now have organic superconductors with critical temperatures in excess of 10 K, conducting polymers that are soluble and processable, and used commercially; we have films of a few monolayers that have high in-plane electrical conductivity, and polymers that show great promise in photonics; we even have a few devices that function almost at the molecular level.
Providing an eclectic snapshot of the current state of the art and future implications of the field, Nanomaterials, Polymers, and Devices: Materials Functionalization and Device Fabrication presents topics grouped into three categorical focuses: The synthesis, mechanism and functionalization of nanomaterials, such as carbon nanotubes, graphene, silica, and quantum dots Various functional devices which properties and structures are tailored with emphasis on nanofabrication. Among discussed are light emitting diodes, nanophotonic, nano-optical, and photovoltaic devices Nanoelectronic devices, which include semiconductor, nanotube and nanowire-based electronics, single-walled carbon-nanotube based nanoelectronics, as well as thin-film transistors