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Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.
This tenth volume completes the first series of "Growth of Crystals," which began in 1957. The sources of the volumes are as follows: for Vol. I, the 1st All-Union Conference on Crystal Growth; for Vol. 3, the 2nd; and for Vols. 5 and 6, the 3rd; Vols. 7 and 8 reported the International Symposium on Crystal Growth at the Seventh International Crystallography Con gress, and Vol. 9 the 1969 symposium on crystal growth dedicated to E. S. Fedorov; Vols. 2, 4, and 10 did not originate in conferences. The main problem that largely occupied the conferences and symposia and also the inter mediate volumes was that of real crystal formation, as well as the relation of crystal growth theory to practical crystal production. This tenth volume, which completes this first series, is to a considerable extent a survey. It contains more extensive theoretical and experimental original papers, as well as some shorter papers dealing with particular but important aspects of real crystal formation. The volume opens with a paper by V. V. Voronkov, which deals with the structure of crystal surface in Kossel's model. The model as proposed by Kossel is extremely simple. It deals qualitatively with the basic trends in the growth of an idealized crystal in its own va por at absolute zero, and naturally does not allow one to perform quantitative studies on com plex real processes.
The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.
Papers from the Sixth All-Union Conference on Growth of Crystals comprise Volume 16 of this series. The articles were chosen with a view to more fully elucidate the basic problems of crystal growth as reflected in domestic and foreign reviews and in original studies. This volume consists of six parts. Part I is devoted to mechanisms of crystal growth that are important for production of materials with given properties. This part examines the temporal evolution of an inhomogeneous state and the array of semicellular and eutectic structures during microstructure formation, the effect of impurity on the nonequi librium vacancy concentration in a growing crystal, and the role of soluble and insoluble impurities in the birth and growth of crystals. Part II deals with the synthesis and electrophysical properties of novel solid electrolytes that are promis ing for practical use, analysis and correlation of the large amount of data on growth by the Bridgman-Stockbar ger method of single crystals of fluorite phases far from stoichiometry, and the hydrothermal chemistry and growth of hexagonal germanium dioxide.
Since the first publication of this definitive work nearly 40 years ago, this fourth edition has been completely rewritten. Crystallization is used at some stage in nearly all process industries as a method of production, purification or recovery of solid materials. Incorporating all the recent developments and applications of crystallization technology, Crystallization gives clear accounts of the underlying principles, a review of the past and current research themes and guidelines for equipment and process design. This new edition introduces and enlarges upon such subjects as: Control and Separation of polymorphs and chiral crystals Micro- and macro-mixing and the use of computer fluid dynamics Seeding and secondary nucleation in batch crystallization processes Incorporation of upstream and downstream requirements into design procedures for crystallization plant Computer-aided molecular design and its use in crystal habit modifier selection Crystallization provides a comprehensive overview of the subject and will prove invaluable to all chemical engineers and industrial chemists in the process industries as well as crystallization workers and students in industry and academia. Crystallization is written with the precision and clarity of style that is John Mullin's hallmark - a special feature being the large number of appendices that provide relevant physical property data. Covers all new developments and trends in crystallization Comprehensive coverage of subject area
The first volume in the present series contained the papers read at the first conference on crystal growth. This second volume appears during the interval between the first and second conferences, and contains various papers on crystal growth, in addition to the late S. K. Popov's major contribution on growing synthetic corundum. The papers to some extent represent work that has been done in the USSR since the first conference. Some of the papers break entirely fresh ground. We hope that the series will act as a means of contact between Soviet scientists who work on crystal growth, or on producing technically important monocrystals. This contact between scientists is essential. Work on this important topic cannot advance unless such con tact is brought about. A. V. Shubnikov and N. N. Sheftal' vii 1. THEORETICAL AND EXPERIMENTAL INVESTIGATIONS THE THERMODYNAMICS OF CRYSTALLIZATION PRESSURE V. Ya. Khaimov-Mal'kov It has often [1-14] been observed that crystals growing in a medium containing foreign particles repel the particles as well as trap them. Our photographs (Figs. 1,2, and 3) show such repulsion. Lavalle [4] was the first to notice the effect in 1853. There is as yet no agreement in explanation for the effects, nor is there any agree l ment in data onthe pressures that may occur. Somegive values of 10 kg/ cm or so [3-5. 10], others only a few g/cmt [6,7,12,14]. The latter value has been adopted in monographs on crystal growth [l3, 15].