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This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​
DC-DC power conversion circuits improve the switching frequency consistently over the past five decades, pursuing better dynamic response and higher power density. To empower such a trend, silicon power transistors have been advancing continuously. However, they are approaching the theoretical limit of performance, slowing down the developing pace of power electronics. With superior switching characteristic, gallium nitride (GaN) high-electron-mobility transistor (HEMT) rapidly emerged, pushing the operating speed of DC-DC power circuits to a record high level. GaN technology is thus recognized as a promising candidate to enable the next-generation switching power conversion. However, it still faces formidable challenges before the industry-wide adoption, including unique reliability issues, considerable electromagnetic interference (EMI) emissions and intensified power design trade-offs. This dissertation delivers key innovations in power stage, gate driver and control scheme, intending to conquer these challenges. To improve the reliability of GaN power stage, an online condition monitoring is developed to prognose the current-collapse (or i-collapse) effect in GaN HEMT, sensing its dynamic onresistance as aging precursor. A gate leakage inspired junction temperature TJ sensor is integrated to determine the TJ of GaN HEMT, facilitating the calibration of temperature effect on the dynamic on-resistance. As the benefit, TJ-independent online condition monitoring is accomplished, significantly improving the monitoring accuracy. Further, to enhance the system longevity, a proactive temperature frequency scaling scheme is designed to modulate the operating speed according to the thermal stress and power conditions, thereby extending the GaN lifetime while minimizing the impact on the system performance of the converter. To reduce the conducted EMI noise, an adaptive strength gate driving scheme is developed for GaN HEMT. By modulating the driving strength at the start point of Miller Plateau during the switching transitions, it achieves an independent control of low di/dt and high dv/dt. Thus, the conducted EMI noise, mainly caused by di/dt, is reduced, while the switching power loss overhead is minimized. By such a means, the classic design trade-off between EMI noise and power efficiency is effectively balanced. To facilitate such an active control, an emulated Miller Plateau tracking scheme is proposed to identify the critical di/dt and dv/dt instants, which are susceptible to load current and power input voltage conditions. These proposed techniques are incorporated in a GaN-based buck converter for verification. Moreover, a continuous random spread-spectrum-modulation (C-RSSM) technique is utilized to scatter the EMI spectra evenly and continuously, attenuating the EMI further. For demonstration, the proposed C-RSSM scheme is applied to a GaN-based buck converter with peak current mode control. In the meantime, a one-cycle on-time rebalancing scheme is designed to overcome the crossover frequency limit existing in the conventional PWM control, thereby stabilizing the duty ratio under frequency modulation. Beneficially, the output jittering effect induced by RSSM is removed, balancing the trade-off between EMI and output regulation.
With the growing demands for high frequency, high temperature, and high power density applications in power electronics industry, silicon is reaching its theoretical limits. Wide band gap materials, such as GaN and SiC, have become the most popular successor candidates to keep "More than Moore" alive, due to their superior properties and mature technological process. However, there are many design challenges for driving GaN power transistors, including tight restriction on the gate voltage, EMI and reliability issues due to the large dv/dt and di/dt slew rates, the precision timing control, etc. In this thesis, an integrated smart gate driver IC with segmented output stage topology, programmable sense-FET, current sensing circuits and an on-chip stacked-based CPU for flexible digital control is presented. This IC is fabricated using TSMC's 0.18 um BCD GEN2 technology process for driving a d-mode GaN power HEMT in cascode configuration. The embedded CPU can configure all the digital control bits on-the-fly, with only 6 I/O pins. By using segmentation technique, this IC can suppress gate voltage spike and achieve switching node slope control. Compared with conventional fixed ROUT driving scheme, the gate voltage overshoot during transition is reduced by 89% with a load current of 5 A. In an 8 V to 15 V, 7.5 W boost converter operating at 1 MHz, an average EMI reduction of 4.43 dB is achieved between 40 MHz to 200 MHz, by utilizing dynamic driving strategy. When fSW = 2 MHz, the overall power conversion efficiency is improved by 6% at the rated output power. The programmable sense-FET and current sensing circuit can provide peak-current detection with a response time of 26 ns. This IC has many other add-on functions, including the active driving mode, which can change the best driving pattern on-the-fly. Compared to conventional gate drivers, the proposed driver IC offers a fully integrated solution, which eliminates the need for external controller, addition passive components, and analog circuit building for close loop regulation. System volume is reduced, while the design exibility is greatly improved.
Several decades ago the resonant gate driving technique was proposed. Given the recent rapid growth in GaN HEMT power device applications for high-frequency power applications, research has been conducted in the power electronics field using resonant gate driving for GaN power devices. Previous research for resonant gate drivers for GaN HEMT devices mostly focused on implementing the gate driving function itself, and mostly for normally-on HEMT devices. The normally-off (enhancement mode) GaN power device was introduced to the commercial market in 2009. A new resonate gate driver is proposed in this work to implement resonant gate driving for commercial high-speed normally-off GaN power devices. The desired resonant condition is configured by different turn-on and turn-off driving pulses with specific driving time and pulse width. Using synchronous timing control within the driver integrated circuit, the power device gate voltage is securely clamped within the expected gate voltage at switching frequencies beyond 10 MHz. In this research, a customized resonant gate driver IC was designed and developed on a commercially-available silicon CMOS process. Compared with current commercial gate driver ICs, our test results demonstrate the effectiveness, advantages and limitations of the proposed gate driver IC for the enhancement-mode GaN power device using alternative resonant gate driving techniques for the first time.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.