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Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Research on organic electronics (or plastic electronics) is driven by the need to create systems that are lightweight, unbreakable, and mechanically flexible. With the remarkable improvement in the performance of organic semiconductor materials during the past few decades, organic electronics appeal to innovative, practical, and broad-impact applications requiring large-area coverage, mechanical flexibility, low-temperature processing, and low cost. Thus, organic electronics appeal to a broad range of electronic devices and products including transistors, diodes, sensors, solar cells, lighting, displays, and electronic identification and tracking devices A number of commercial opportunities have been identified for organic thin film transistors (OTFTs), ranging from flexible displays, electronic paper, radio-frequency identification (RFID) tags, smart cards, to low-cost disposable electronic products, and more are continually being invented as the technology matures. The potential applications for "plastic electronics" are huge but several technological hurdles must be overcome. In many of these applications, transistor serves as a fundamental building block to implement the necessary electronic functionality. Hence, research in organic thin film transistors (OTFTs) or organic field effect transistors (OFETs) is eminently pertinent to the development and realization of organic electronics. This book presents a comprehensive investigation of the production and application of a variety of polymer based transistor devices and circuits. It begins with a detailed overview of Organic Thin Film Transistors (OTFTs) and discusses the various possible fabrication methods reported so far. This is followed by two major sections on the choice, optimization and implementation of the gate dielectric material to be used. Details of the effects of processing on the efficiency of the contacts are then provided. The book concludes with a chapter on the integration of such devices to produce a variety of OTFT based circuits and systems. The key objective is to examine strategies to exploit existing materials and techniques to advance OTFT technology in device performance, device manufacture, and device integration. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. Overall, a major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling the use of a well-established PECVD infrastructure, while not compromising the performance of electronics. The techniques established here are not limited to use in OTFTs only; the organic semiconductor and SiNx combination can be used in other device structures (e.g., sensors, diodes, photovoltaics). Furthermore, the approach and strategy used for interface optimization can be extended to the development of other materials systems.