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These data sheets present a compilation of a wide range of electrical, optical and energy values for gallium phosphide and the gallium arsenidegallium phosphide system in bulk and film form. Electrical properties include lifetime and thermoelectric effects. Emission data have been broken down into the varied electron and photon emissions which result from application of energy in the electromagnetic spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped gallium phosphide, as well as phonon assignments, effective mass tables and gyromagnetic ratios. The optical properties include absorption, reflection and refractive index. Magnetic data are included, as well asseveral bordering physical phenomena, such as Debye temperature, thermal emf and thermal conductivity. Each property is compiled over the widest possible range of parameters from references obtained in a thorough literature search. (Author).
Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.