Download Free Fundamental Optical Properties Of Lead Telluride Tin Telluride And Their Alloy Book in PDF and EPUB Free Download. You can read online Fundamental Optical Properties Of Lead Telluride Tin Telluride And Their Alloy and write the review.

The data sheets present a compilation of a wide range of electronic properties for lead telluride, tin telluride and the lead-tin-tellurium ternary system. The energy band structure is thoroughly reviewed and included are effective mass and dielectric constant. Electrical properties include mobility, resistivity, lifetime and piezoresistance. The various thermal and magnetic properties such as Debye temperature, thermal conductivity, phonon dispersion and the Seebeck, Nernst and Ettingshausen coefficients are reported. The g-factor and magnetic susceptibility are given. The optical properties, absorption, refractive index and reflectivity are reported; also photoconductivity, photoelectric emission and laser effects. Each property is compiled over the widest possible range of parameters, including bulk and film samples. A data table which includes a wide range of mechanical, physical and thermal properties is included as well as a summary of crystal structure and phase transitions. A general discussion of preparation methods and device applications is given. (Author).
Doping effects and photoconductivity were studied for single crystal films of lead tin telluride (Pb(0.8)Sn(0.2)Te) grown by vapor phase epitaxy. Growth of films was carried out by an evaporation condensation process in which the alloy was evaporated from a polycrystalline source and the vapor was condensed on a barium fluoride substrate. Interesting doping effects were obtained with indium which produces a deep level in the gap with unusual properties. Extensive galvanomagnetic measurements suggest that indium enters as a self-compensating impurity and pins the Fermi level near midgap, in contrast to other Group III elements such as gallium and thallium which dope the material n-type and p-type, respectively. An investigation of the kinetics of photoconductivity revealed that around the 'device temperature' of 77 K, the recombination of excess carriers is thermally activated, but becomes approximately temperature independent below 50 K. These results and the magnitude of the photoconductive life-time lead to the surprising conclusion that contrary to prevailing opinion, Auger recombination is not the dominant recombination mechanism for samples with carrier concentration in the 1-10/10 to the 16th power cc range. (Author).