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The future NASA Mars project will need an ultra-fast, highly sensitive photodetector to increase the bandwidth of free-space long-range communication, which is now done primarily using RF signals. Our original motivation in fabricating superconducting nanowire single-photon detectors (SN-SPD) is to fulfill this need. The SN-SPD's reported GHz counting rates [1] make it very attractive for this application. A new fabrication process for making SN-SPDs using hydrogen-silsesqioxane (HSQ), a high-resolution electron-beam lithography resist will be presented. An electron-beam proximity-effect correction program was developed to achieve nanowires with uniform linewidths, which is important for device performance. Finally, we present initial test results that show device functionality and performance. Our best device has a detection efficiency of [approx.] 10 % at 1064 nm photon wavelength at 2.1 K and a photon-induced voltage-pulse duration of [approx.] 3 ns.
Nanoscopic superconducting meander patterns offer great promise as a new class of cryogenic radiation sensors capable of single photon detection. To realize this potential, control of the superconducting properties on the nanoscale is imperative. To this end, Superconducting Nanowire Single Photon Detectors (SNSPDs) are under development by means Energetic Neutral Atom Beam Lithography and Epitaxy, or ENABLE. ENABLE can growth highly-crystalline, epitaxial thin-film materials, like NbN, at low temperatures; such wide-ranging control of fabrication parameters is enabling the optimization of film properties for single photon detection. T{sub c}, H{sub c2},?{sub GL} and J{sub c} of multiple thin films and devices have been studied as a function of growth conditions. The optimization of which has already produced devices with properties rivaling all reports in the existing literature.
This work presents three advances to scale SNSPDs from few-pixel devices to large detector arrays: atomic layer deposition for the fabrication of uniform superconducting niobium nitride films of few-nanometer thickness, a frequency-multiplexing scheme to operate multiple detectors with a reduced number of lines, and the integration of SNSPDs with free-form polymer structures to achieve efficient optical coupling onto the active area of the detectors.
Superconducting nanowire single-photon detectors (SNSPDs) are nanodevices usually made from thin niobium nitride (NbN) films. Operated at liquid helium temperature, they can exhibit high detection efficiency with low dark-counts associated with a fast response time and a low timing jitter. Covering a broad detection range from ultraviolet to mid-infrared, SNSPDs are a very attractive alternative to silicon or gallium arsenide based semiconductor detectors for fiber based telecommunication when single-photon sensitivity and high counting rates are necessary. Efficient packaging and fiber coupling of a SNSPD is in itself a real challenge and is often a limiting factor in reaching high system quantum efficiency. Our approach makes use of a controlled expansion alloy which has been adequately heat treated to enhance its characteristics for cryogenic operation. This insures the integrity of the optical coupling at cryogenic temperatures while done at room temperature. It also provides a good attenuation for electromagnetic interference due to the high relative permeability of the nickel-iron alloy. The small form factor of this pigtailed optical fiber package makes it versatile and could be easily integrated with a commercial cryogen-free system or simply dipped into a standard helium transport Dewar. We report on our theoretical and experimental methodology to evaluate the optical coupling quality and present the optoelectronic characterization of two devices packaged in this way. Electrical simulation is studied to understand the speed limitation factor inherent to these devices and preliminary speed and jitter measurements are reported.
The Superconducting Nanowire single-photon detector (SNSPD) made with niobium-titanium nitride (NbTiN) thin films fabricated on oxidized silicon substrates are highly promising nanodevices. The SNSPD is an immensely capable infrared single photon detector. When cooled down with liquid helium the device exhibits high detection efficiency, low dark-counts in spite of fast response times, and low timing jitter. For good single-photon sensitivity at telecom wavelengths, picosecod timing resolutions (
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Semiconductor nanowires are nanostructures with lengths up to few microns and small cross sections (10ths of nanometers). In the recent years the development in the field of III-N nanowire technology has been spectacular. In particular they are consider as promising building in nanoscale electronics and optoelectronics devices; such as photodetectors, transistors, biosensors, light source, solar cells, etc. In this work, we present fabrication and the characterization of photodetector and light emitter based devices on III-N nanowires. First we present a study of a visible blind photodetector based on p-i-n GaN nanowires ensembles grown on Si (111). We show that these devices exhibit a high responsivity exceeding that of thin film counterparts. We also demonstrate UV photodetectors based on single nanowires containing GaN/AlN multi-axial quantum discs in the intrinsic region of the nanowires. Photoluminescence and cathodoluminescence spectroscopy show spectral contributions above and below the GaN bandgap according to the variation of the discs thickness. The photocurrent spectra show a sub-band-gap peak related to the interband absorption between the confined states in the large Qdiscs. Finally we present a study of photodetectors and light emitters based on radial InGaN/GaN MQW embedded in GaN wires. The wires used as photodetectors showed a contribution below the GaN bandgap. OBIC measurements demonstrate that, this signal is exclusively generated in the InGaN MQW region. We showed that LEDs based on this structure show a electroluminescence emission and a red shift when the In content present in the QWs increases which is in good agreement with photoluminescence and cathodoluminescence results.