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One-dimensional semiconductor nanowires are considered to be promising materials for future nanoelectronic applications. However, before these nanowires can be integrated into such devices, a thorough understanding of their growth behaviour is necessary. In particular, methods that allow the control over nanowire growth are deemed especially important, as it is these methods that will enable the control of nanowire dimensions such as length and diameter. The production of nanowires with high-aspect ratios is vital in order to take advantage of the unique properties experienced at the nanoscale, thus allowing us to maximise their use in next-generation electronics. Additionally, the development of low-resistivity interconnects is desirable in order to connect such nanowires in multi-nanowire components. Consequently, this book aims to discuss the synthesis and characterisation of semiconductor nanowires and metal interconnects, as they apply to future electronics applications.
Semiconductor nanowires are nanostructures with lengths up to few microns and small cross sections (10ths of nanometers). In the recent years the development in the field of III-N nanowire technology has been spectacular. In particular they are consider as promising building in nanoscale electronics and optoelectronics devices; such as photodetectors, transistors, biosensors, light source, solar cells, etc. In this work, we present fabrication and the characterization of photodetector and light emitter based devices on III-N nanowires. First we present a study of a visible blind photodetector based on p-i-n GaN nanowires ensembles grown on Si (111). We show that these devices exhibit a high responsivity exceeding that of thin film counterparts. We also demonstrate UV photodetectors based on single nanowires containing GaN/AlN multi-axial quantum discs in the intrinsic region of the nanowires. Photoluminescence and cathodoluminescence spectroscopy show spectral contributions above and below the GaN bandgap according to the variation of the discs thickness. The photocurrent spectra show a sub-band-gap peak related to the interband absorption between the confined states in the large Qdiscs. Finally we present a study of photodetectors and light emitters based on radial InGaN/GaN MQW embedded in GaN wires. The wires used as photodetectors showed a contribution below the GaN bandgap. OBIC measurements demonstrate that, this signal is exclusively generated in the InGaN MQW region. We showed that LEDs based on this structure show a electroluminescence emission and a red shift when the In content present in the QWs increases which is in good agreement with photoluminescence and cathodoluminescence results.
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields
Thermal conductivity measurement has always been a challenging and difficult task for thermoelectric characterization of semiconductor nanowire. A process flow for poly-Si nanowire device fabrication has been reported in this thesis. The device includes the nanowires as a part of its fabrication which avoids complicated placement of nanowire on the device for experiment and also avoids the contact resistance on the both sides of nanowire. The process flow is repeatable, reliable, and able to produce functional devices. Specifically, processes were found in this research to optimize the stress of Si nitride thin films and isotropic etching of Si substrate by using particular gas mixtures. By this device, thermal conductivity of nanowires of any materials compatible to micro/nano- fabrication, can be measured rather than poly-Si nanowires only.
Advances in nanofabrication, characterization tools, and the drive to commercialize nanotechnology products have contributed to the significant increase in research on inorganic nanowires (INWs). Yet few if any books provide the necessary comprehensive and coherent account of this important evolution. Presenting essential information on both popular and emerging varieties, Inorganic Nanowires: Applications, Properties, and Characterization addresses the growth, characterization, and properties of nanowires. Author Meyyappan is the director and senior scientist at Ames Center for Nanotechnology and a renowned leader in nanoscience and technology, and Sunkara is also a major contributor to nanowire literature. Their cutting-edge work is the basis for much of the current understanding in the area of nanowires, and this book offers an in-depth overview of various types of nanowires, including semiconducting, metallic, and oxide varieties. It also includes extensive coverage of applications that use INWs and those with great potential in electronics, optoelectronics, field emission, thermoelectric devices, and sensors. This invaluable reference: Traces the evolution of nanotechnology and classifies nanomaterials Describes nanowires and their potential applications to illustrate connectivity and continuity Discusses growth techniques, at both laboratory and commercial scales Evaluates the most important aspects of classical thermodynamics associated with the nucleation and growth of nanowires Details the development of silicon, germanium, gallium arsenide, and other materials in the form of nanowires used in electronics applications Explores the physical, electronic and other properties of nanowires The explosion of nanotechnology research activities for various applications is due in large part to the advances in the growth of nanowires. Continued development of novel nanostructured materials is essential to the success of so many economic sectors, ranging from computing and communications to transportation and medicine. This volume discusses how and why nanowires are ideal candidates to replace bulk and thin film materials. It covers the principles behind device operation and then adds a detailed assessment of nanowire fabrication, performance results, and future prospects and challenges, making this book a valuable resource for scientists and engineers in just about any field. Co-author Meyya Meyyappan will receive the Pioneer Award in Nanotechnology from the IEEE Nanotechnology Council at the IEEE Nano Conference in Portland, Oregon in August, 2011
Nanostructured Zinc Oxide covers the various routes for the synthesis of different types of nanostructured zinc oxide including; 1D (nanorods, nanowires etc.), 2D and 3D (nanosheets, nanoparticles, nanospheres etc.). This comprehensive overview provides readers with a clear understanding of the various parameters controlling morphologies. The book also reviews key properties of ZnO including optical, electronic, thermal, piezoelectric and surface properties and techniques in order to tailor key properties. There is a large emphasis in the book on ZnO nanostructures and their role in optoelectronics. ZnO is very interesting and widely investigated material for a number of applications. This book presents up-to-date information about the ZnO nanostructures-based applications such as gas sensing, pH sensing, photocatalysis, antibacterial activity, drug delivery, and electrodes for optoelectronics. Reviews methods to synthesize, tailor, and characterize 1D, 2D, and 3D zinc oxide nanostructured materials Discusses key properties of zinc oxide nanostructured materials including optical, electronic, thermal, piezoelectric, and surface properties Addresses most relevant zinc oxide applications in optoelectronics such as light-emitting diodes, solar cells, and sensors