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We have employed transmission electron microscopy (TEM) and analytical electron microscopy to perform preliminary assessment of the structure, composition and electronic properties of nanowire arrays at high spatial resolution. The two systems studied were bismuth and bismuth telluride nanowire arrays in alumina (wire diameters 40nm), both of which are promising for thermoelectric applications. Imaging coupled with diffraction in the TEM was employed to determine the grain size in electrodeposited Bi2Te3 nanowires. In addition, a composition gradient was identified along the wires in a short region near the electrode by energy-dispersive x-ray spectroscopy. Electron energy loss spectroscopy combined with energy-filtered imaging in the TEM revealed the excitation energy and spatial variation of plasmons in bismuth nanowire arrays.
This dissertation describes experimental studies of the structures and properties, and their correlations in ferromagnetic nanowires and nanotubes fabricated using porous templates. Ferromagnetic Ni and Fe nanowires with diameters 30 ~ 250 nm were electroplated into the pores of anodic aluminum oxide membranes. The effects of nanowire diameter on structural and magnetic properties were investigated. The microstructures of these nanowires were studied using X-ray diffraction and selected-area electron diffraction measurements. The magnetic properties of the nanowires were investigated using magnetic hysteresis measurements and magnetic force microscopy. Additionally, ferromagnetic Ni-P nanotubes were fabricated using an electroless chemical deposition method. Structure and composition analyses were conducted using X-ray diffraction and energy-dispersive spectroscopy. The magnetic properties of the nanotube arrays and the electronic properties of individual nanotubes were studied. Hysteresis measurements revealed that the 250-nm diameter Ni nanowires had a poor squareness in their hysteresis loops, indicating the existence of multi-domain states. In comparison, the squareness in the hysteresis loops of 60-nm and 30-nm Ni nanowires was much improved, suggesting the existence of single domain states in these smaller diameter nanowires. Magnetic force microscopy measurements confirmed the magnetic domain structures suggested by magnetic hysteresis measurements. Similar investigations of Fe nanowires with diameters of 250 nm and 60 nm found that they all have multidomain magnetic structures. This is expected based on their material properties and polycrystalline structures. Furthermore, magnetic structures of Y-branches and multi-wire clusters were also studied using magnetic force microscopy. The as-prepared Ni-P nanotubes had an amorphous structure. Following a heat treatment, however, a structural phase transformation from the amorphous phase to a crystalline phase was observed using X-ray diffraction measurements. The tetragonal crystalline phase of Ni3P and the face-centered-cubic phase of Ni were confirmed via simulations by the GSAS software. The high Ni3P content accounts for the semiconducting behavior and a low magnetic anisotropy observed in the Ni-P nanotubes. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/149593
Thermoelectric devices, which convert temperature gradients into electricity, have the potential to harness waste heat to improve overall energy efficiency. However, current thermoelectric devices are not cost-effective for most applications due to their low efficiencies and high material costs. To improve the overall conversion efficiency, thermoelectric materials should possess material properties that closely resemble a "phonon glass" and an "electron crystal". The desired low thermal and high electrical conductivities allow the thermoelectric device to maintain a high temperature gradient while effectively transporting current. Unfortunately, thermal transport and electrical transport are a closely coupled phenomena and it is difficult to independently engineer each specific conduction mechanism in conventional materials. One strategy to realize this is to generate nanostructured silicon (e.g. silicon nanowires (SiNWs)), which have been shown to reduce thermal conductivity ([kappa]) through enhanced phonon scattering while theoretically preserving the electronic properties; therefore, improving the overall device efficiency. The ability to suppress phonon propagation in nanostructured silicon, which has a bulk phonon mean free path ~ 300 nm at 300 K, has raised substantial interest as an ultra-low [kappa] material capable of reducing the thermal conductivity up to three orders of magnitude lower than that of bulk silicon. While the formation of porous silicon and SiNWs has individually been demonstrated as promising methods to reduce [kappa], there is a lack of research investigating the thermal conductivity in SiNWs containing porosity. We fabricated SiNW arrays using top-down etching methods (deep reactive ion etching and metal-assisted chemical etching) and by tuning the diameter with different patterning methods and tuning the internal porosity with different SiNW etching conditions. The effects of both the porosity and the SiNW dimensions at the array scale are investigated by measuring [kappa] of vertical SiNW arrays using a nanosecond time-domain thermoreflectance technique. In addition to thermoelectric devices, vertical SiNW arrays, due to their anisotropic electronic and optical properties, large surface to volume ratios, resistance to Li-ion pulverization, ability to orthogonalize light absorption and carrier transport directions, and trap light, make vertical SiNW arrays important building blocks for various applications. These may include sensors, solar cells, and Li-ion batteries. Many of these applications benefit from vertical SiNW arrays fabricated on non-silicon based substrates which endow the final devices with the properties of flexibility, transparency, and light-weight while removing any performance limitation of the silicon fabrication substrate. We then developed two vertical transfer printing methods (V-TPMs) that are used to detach SiNW arrays from their original fabrication substrates and subsequently attach them to any desired substrate while retaining their vertical alignment over a large area. The transfer of vertically aligned arrays of uniform length SiNWs is desirable to remove the electrical, thermal, optical, and structural impact from the fabrication substrate and also to enable the integration of vertical SiNWs directly into flexible and conductive substrates. Moreover, realization of a thermoelectric device requires the formation of electrical contacts on both sides of the SiNW arrays. We formed metallic contacts on both ends of the SiNW arrays with a mechanical supporting and electrical insulating polymer in between. Electrical characterization of the SiNW devices exhibited good current-voltage (I-V) characteristics independent of substrates materials and bending conditions. We believe the V-TPMs developed in this work have great potential for manufacturing practical thermoelectric devices as well as high performing, scalable SiNW array devices on flexible and conducting substrates.
The book offers a new and complex perspective on the fabrication and use of electrodeposited nanowires for the design of efficient and competitive applications. While not pretending to be comprehensive, the book is addressing not only to researchers specialized in this field, but also to Ph.D. students, postdocs and experienced technical professionals.
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.