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Due to insatiate demand for miniaturization of electronics, there is a need for new techniques to measure full-field strain at micro-scale structures. In addition, Micro-Electronic-Mechanical-Systems (MEMS) require a high resolution and high sensitivity material property characterization technique. In this study, a theoretic model for a high sensitivity Moiré Interferometry (MI) for measuring nano-scale strain field has been developed. The study also includes the application of the proposed measurement technique for the study of reliability of next generation nano-electronics/power electronics. The study includes both theoretical and experimental work. In the theoretical part, a far field modeling of a Moiré Interferometer (MI) using the mode decomposition method is proposed according to the analytical formulation from the scalar diffraction theory.^The wave propagation within the defined MI far field domain is solved analytically for a single frequency surface relieved grating structure following the Rayleigh-Sommerfeld formulation under the paraxial approximation. It is shown that the far-field electrical field and the intensity interferogram can be calculated using the mode decomposition method. Furthermore, the near-field (propagation distance
A description of both the theory and practice of physical measurements that use high-sensitivity moiré - principally moiré interferometry. The focus here is on the mechanics and micromechanics of materials and structural elements and the book includes new studies published for the first time. Diverse fields are addressed: advanced composite materials, thermal stresses, electronic packaging, fracture, metallurgy, time-dependence, strain gage calibration. All the methods can be applied for whole-field measurements on nearly and solid bodies. This reader-friendly book will serve engineers and scientists who are concerned with measurements of real phenomena, while also stimulating students to pursue the treasures of experimental analysis.