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This book describes most recent progress in the properties, synthesis, characterization, modelling, and applications of nanomaterials and nanodevices. It begins with the review of the modelling of the structural, electronic and optical properties of low dimensional and nanoscale semiconductors, methodology of synthesis, and characterization of quantum dots and nanowires, with special attention towards Dirac materials, whose electrical conduction and sensing properties far exceed those of silicon-based materials, making them strong competitors. The contributed reviews presented in this book touch on broader issues associated with the environment, as well as energy production and storage, while highlighting important achievements in materials pertinent to the fields of biology and medicine, exhibiting an outstanding confluence of basic physical science with vital human endeavor. The subjects treated in this book are attractive to the broader readership of graduate and advanced undergraduate students in physics, chemistry, biology, and medicine, as well as in electrical, chemical, biological, and mechanical engineering. Seasoned researchers and experts from the semiconductor/device industry also greatly benefit from the book’s treatment of cutting-edge application studies.
The design of novel nanomaterials with tunable geometries and properties has transformed chemistry and physics in recent years. In particular, recent advances in the isolation of two-dimensional films have inspired the exploration and development of stable, self-supporting single layer systems. Most notably graphene, a single layer of hexagonal sp2 carbon, has attracted interest due to intriguing electronic, optical, and mechanical properties. Hexagonal boron nitride (h-BN) is a closely related two- dimensional material, isoelectronic with graphene but often exhibiting very different electronic characteristics. The production of these monolayer materials has revealed exciting new properties that arise due to constrained geometry at the nanoscale. This dissertation explores the atomic scale properties of low-dimensional hexagonal nanomaterials, with a particular focus on hexagonal boron nitride (h-BN), graphene, and related materials. The synthesis processes for hexagonal boron nitride, graphene, nanotubes and nanoribbons will be discussed, with a particular emphasis on chemical vapor deposition. By controlling the number of layers in two-dimensional materials, we can tune their properties for new applications. The fabrication, characterization, and functionalization of additional low-dimensional nanomaterials including nanoribbons, nanotubes, and the composite materials that contain them will also be introduced. In nanoscale systems, material properties are heavily influenced by atomic structure and defects. This dissertation will discuss the investigation of h-BN and graphene at the atomic scale, with a particular emphasis on defects studied by atomic resolution transmission electron microscopy. Further probing the dynamics of these atomic defects includes in situ imaging and heating from room temperature up to 1000°C. Under these extreme conditions, novel defect structures and dynamics have been observed. In the coming years, these materials will continue to revolutionize the way we think about nanoscale materials, and are likely to be implemented into a variety of new and emerging technologies.
Nanoscale and nanostructured materials have exhibited different physical properties from the corresponding macroscopic coarse-grained materials due to the size confinement. As a result, there is a need for new techniques to probe the mechanical behavior of advanced materials on the small scales. Micro and Nano Mechanical Testing of Materials and Devices presents the latest advances in the techniques of mechanical testing on the micro- and nanoscales, which are necessary for characterizing the mechanical properties of low-dimensional materials and structures. Written by a group of internationally recognized authors, this book covers topics such as: Techniques for micro- and nano- mechanical characterization; Size effects in the indentation plasticity; Characterization of low-dimensional structure including nanobelts and nanotubes; Characterization of smart materials, including piezoelectric materials and shape memory alloys; Analysis and modeling of the deformation of carbon-nanotubes. Micro and Nano Mechanical Testing of Materials and Devices is a valuable resource for engineers and researchers working in the area of mechanical characterization of advanced materials.
In the pursuit of further miniaturization beyond Moore's law, tremendous effort has been dedicated to exploring the potential of two-dimensional (2D) materials for nanoscale electronic devices. 2D materials are a group of solid state materials that possess strong in-plane covalent bonds while individual atomic layers are held together by weak van der Waals (vdW) interactions. Hence, their bulk crystals can be exfoliated into few-layer or even atomically thin single-layers via micro-mechanical exfoliation techniques. These materials possess unique and exotic properties due to quantum confinement of importance to future electronics. However, many technical problems need to be solved to realize this goal. For example, as 2D material based devices become smaller down to the nanometer scale, the electrical contacts must also be reduced in scale which creates different characteristics from those of macroscopic counterparts. In addition, there are issues of reliability and stability with devices comprised of such materials. There is a need to understand the electronic and chemical properties of several interfaces that arise in such materials: metal-2D and 2D-2D junctions, for example. To this end, this thesis focuses on understanding nanoscale metal-2D semiconductor (SC) and 2D SC-2D SC junctions exploring: (1) electronic and optoelectronic behavior at the nanoscale junction of metal-MoS2 and dependence on the layer number (thickness), (2) realization of voltage selectable photodiodes based on a lateral in-plane MoS2-WSe2 heterojunctions, and (3) interfacial properties and (opto)electronic characteristics of a phosphorene-MoS2 vertical vdW p-n junction. The first part of this thesis explores the layer number dependent electrical characteristics of the MoS2-metal nanoscale junction using current imaging of MoS2 nanosheets consisting of regions of varying different thicknesses using conductive and photoconductive spectral atomic force microscopy (C- and PCS-AFM). The layer number dependence of the effective barrier was measured, by obtaining consecutive current images while changing bias voltages, showing it to be linear. At the same time, spatially resolved two-dimensional (2D) maps of local electrical properties are generated from simultaneously recorded local current-voltage (IV) data. Furthermore, the layer number dependent spectral photoresponse of MoS2 is investigated, which shows the highest response in single layer (1L) region. The photoresponse decreases for increasing layer number, but increases again between 4L and 1 OL due to increased light absorption. The photoresponse is also strongly dependent on the wavelength of the incident light, showing much higher currents for photon energies that are above the optical bandgap. The photoresponse in forward and reverse biases shows barrier symmetry for 1 L but asymmetry for 2, 3, and 4L, which further indicates a dominant role of the barrier on carrier transport at the junction. The second part of this thesis investigates the spatially resolved transverse electrical properties of the monolayer WSe2 -MoS2 lateral p-n heterostructures at their nanoscale junctions with metals both in the dark and under laser illumination. As in the first part of the thesis, C- and PCS-AFM, versatile tools to conveniently and efficiently interrogate layer-dependent electronic and optoelectronic characteristics in a MoS2 crystal containing regions of different thicknesses, which enables direct characterization and comparison of the different layer regions without the complexities associated with fabricating and testing of different individual field-effect transistor devices, are used for measurements. By performing current imaging using a PtIr-coated conductive tip on an ultrathin nanosheet that includes homogeneous crystals of WSe2 and MoS2 and a lateral junction region in between, many thousands of WSe2/MoS2/the junction-metal contact points form during imaging and directly compare their local properties at the same time under identical experimental conditions with the nanoscale spatial resolution. The third part of this thesis explores a new type of 2D vertical heterostructures that simultaneously possess desirable properties of constituent materials, paving the path for overcoming intrinsic shortcomings of each component material to be used as an active material in nanoelectronic devices. As a first example, a MoS 2-graphene vertical heterostructure is constructed and its charge transfer and photoluminescence (PL) at the interface are investigated. C-AFM and Raman spectroscopy show that there is a significant charge transfer between the two component materials. The PL intensity of monolayer MoS2 is noticeably quenched when in contact with a single layered graphene in comparison to that of a bare monolayer MoS2 crystal. Then, with the acquired understanding of the underlying physics at the 2D vdW heterointerfaces, the possibility of a black phosphorus (BP)-MoS2 vertical heterostructure as an ultrathin channel material for high-performance 2D (opto)electronic devices is studied. CVD-synthesized MoS2 and micromechanically exfoliated BP crystals are stacked together to form a vertical p-n heterostructure. Optical microscopy, AFM images, and Raman spectroscopy data show that the MoS2 thin films can be used as a passivation layer, protecting BP from deteriorating in ambient conditions for extended period of time or under an elevated temperature in an Ar environment. The IV characteristics of FET devices based on the vertical heterostuctures exhibit that the MoS2 layer has limited impact on superior carrier transport properties of the BP in the dark. Upon light illumination, photoconductivity of the BP-MoS2 heterostructure region increased compared to that of the bare BP region of the same flake, mainly due to the fact that a built-in electric field formed at the BP-MoS2 interface facilitates the dissociation of electron-hole pairs generated by light absorption.
"Providing cutting-edge research on nanoelectronics and photonic devices and its application in future integrated circuits, this state-of-the-art book tackles the challenges of the different detailed theoretical and analytical models of solving the problems of various nanodevices. The volume also explores from different angles the roles of material composition and choice of materials that now play the most critical role in determining outcomes of various low-dimensional nanoelectronic devices. The applications of those findings are extremely beneficial for the computing and telecommunication industries. Beginning with a solid theoretical background for every chapter, this volume covers the hottest areas of present-day electronic engineering. The continuous miniaturization of devices, components, and systems requires corresponding cutting-edge theoretical analysis supported by simulated findings before actual fabrication. That purpose is given maximum focus in this volume, which has interdisciplinary appeal, making it a comprehensive technological volume that deals with underlying aspects of physics, materials, structures in nano-regime, and the corresponding end-product in the form of device. The chapters provide up-to-the-minute theoretical and experimental works on nanoscale devices, with special emphasis on nano-MOSFET modeling and characterization and the latest pioneering research in the area of nanodevice fabrication. Equivalent circuit modeling is also analyzed for a few specific devices, leading to potential applications in various systems. The research provided in Low-Dimensional Nanoelectronic Devices: Theoretical Analysis and Cutting-Edge Research will help researchers and scientists in this area better address real-world problems and challenges in developing new low-dimensional nanoelectronic devices and will contribute toward building sustainable technology for the future"--
Nanoscale and nanostructured materials have exhibited different physical properties from the corresponding macroscopic coarse-grained materials due to the size confinement. As a result, there is a need for new techniques to probe the mechanical behavior of advanced materials on the small scales. Micro and Nano Mechanical Testing of Materials and Devices presents the latest advances in the techniques of mechanical testing on the micro- and nanoscales, which are necessary for characterizing the mechanical properties of low-dimensional materials and structures. Written by a group of internationally recognized authors, this book covers topics such as: Techniques for micro- and nano- mechanical characterization; Size effects in the indentation plasticity; Characterization of low-dimensional structure including nanobelts and nanotubes; Characterization of smart materials, including piezoelectric materials and shape memory alloys; Analysis and modeling of the deformation of carbon-nanotubes. Micro and Nano Mechanical Testing of Materials and Devices is a valuable resource for engineers and researchers working in the area of mechanical characterization of advanced materials.
The techniques and methods that can be applied to materials characterization on the microscale are numerous and well-established. Divided into two parts, Characterization of Nanostructures provides thumbnail sketches of the most widely used techniques and methods that apply to nanostructures, and discusses typical applications to single nanoscale o
For the efficient utilization of energy resources and the minimization of environmental damage, thermoelectric materials can play an important role by converting waste heat into electricity directly. Nanostructured thermoelectric materials have received much attention recently due to the potential for enhanced properties associated with size effects and quantum confinement. Nanoscale Thermoelectrics describes the theory underlying these phenomena, as well as various thermoelectric materials and nanostructures such as carbon nanotubes, SiGe nanowires, and graphene nanoribbons. Chapters written by leading scientists throughout the world are intended to create a fundamental bridge between thermoelectrics and nanotechnology, and to stimulate readers' interest in developing new types of thermoelectric materials and devices for power generation and other applications. Nanoscale Thermoelectrics is both a comprehensive introduction to the field and a guide to further research, and can be recommended for Physics, Electrical Engineering, and Materials Science departments.