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The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction paths. The surface reaction mechanism is based on insight from attenuated total-reflection Fourier-transform infrared spectroscopy experiments. This mechanism describes the adsorption of radical species on an oxide surface, ion-enhanced reactions leading to species desorption from the surface layer, radical abstractions competing for surface sites, and direct energy-dependent ion sputtering of the oxide material. Experimental measurements of total ion densities, relative radical densities as functions of plasma operating conditions, and net deposition-rate have been compared to model predictions to test and modify the chemical kinetics mechanisms. Results show good quantitative agreement between model predictions and experimental measurements.
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Experimental observations of propane-air flames were performed. Measurements of hydroxyl (OH) radical concentration were made using resonance line absorption techniques. A microwave-pumped low pressure discharge in argon and water vapor is employed to produce strong OH radical band radiation in the 308 nm region. This radiation is transmitted through the plume and absorption data are taken at various radical positions using an optical multichannel analyzer. This absorption data is used to compute OH number density using a model for the absorption band characteristics as a function of temperature based on an atlas of line strengths. A numerical computation of flow fields, temperature profile and OH number density is carried out by using a technique of computational fluid dynamics (CFD). The results of CFD computation are good compared with experimental observation with a good agreement. Hung, R. J. Unspecified Center NAG8-102...