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Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Tremendous advances have been made in the use of silicides as contacts and interconnects in micro-electronic devices and as active layers in sensors. A flourish of novel fabrication concepts and characterization techniques has led to high-quality silicide devices and a better understanding of the electronic and micrometallurgical properties of their interfaces. However, the shrinking physical dimensions of ULSI devices beyond the deep submicron regime now poses new and serious materials challenges for the development of manufacturable silicide processes. Scientists and engineers from materials science, physics, chemistry, device, processing and other disciplines come together in this book to examine the current issues facing silicide thin-film applications. Topics include: silicide fundamentals - energetics and kinetics; processing of silicide thin films; ULSI issues; CVD silicides; semiconducting silicides; processing of germano-silicide thin films; silicides and analogs for IR detection; interfaces, surfaces and epitaxy; novel structures and techniques and properties of silicide thin films.
At present, the marketplace for professionals, researchers, and graduate students in solid-state physics and materials science lacks a book that presents a comprehensive discussion of ferroelectrics and related materials in a form that is suitable for experimentalists and engineers. This book proposes to present a wide coverage of domain-related issues concerning these materials. This coverage includes selected theoretical topics (which are covered in the existing literature) in addition to a plethora of experimental data which occupies over half of the book. The book presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observations of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. "Domains in Ferroic Crystals and Thin Films" covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In other textbooks on solid state physics, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In contrast, "Domains in Ferroic Crystals and Thin Films" concentrates on domain-related phenomena in nonmagnetic ferroics. These materials are still inadequately represented in solid state physics textbooks and monographs.
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
The proceedings of a symposium held April 1996, in San Francisco, California. The field is experiencing a rapid growth which currently is expanding from portable computer applications to include display applications for desktop computers and a wide array of consumer and industrial products. Seventy-six contributions are divided into six sections covering amorphous silicon thin-film transistor materials, polycrystalline silicon thin-film transistor materials, liquid crystal display materials, transparent conducting oxides, field emission display materials, and other emissive display materials. Annotation copyrighted by Book News, Inc., Portland, OR
While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.
This book focuses on the fractal aspects of materials and disordered systems. Disorder plays a critical role in many naturally occurring and manufactured materials, both at the microscopic level (e.g., glasses) and the macroscopic level (e.g., foams, dendritic alloys, porous rock). The book addresses the dynamical processes involved in the formation and characterization of a wide range of disordered materials. Topics include: porous media; colloids; chemical reactions; dynamical aspects of the liquid-glass transition; disordered materials and surfaces and scaling and nanostructures.
The fabrication of Si- and compound semiconductor-based devices involves a number of steps ranging from material growth to pattern definition by lithography, and ultimately, pattern transfer by etching/deposition. The key to device manufacturing, however, is reproducibility, low cost and high yield. Diagnostic techniques allow correlation between processing and actual device performance to be established. Researchers from universities, industry and government come together in this book to examine the advances in diagnostic techniques that provide critical information on structural, optical and electrical properties of semiconductor devices, as well as monitoring techniques for equipment/processes for control and feedback. The overriding goal is for rapid, accurate materials characterization, both in situ and ex situ. Topics include: in situ diagnostics; proximal probe microscopies; optical probes of devices and device properties; spectroscopic ellipsometry/structural diagnostics; and material analysis - X-ray techniques, strain measurements and passivation.
The emphasis of this book is on the quantitative analysis of transformation kinetics, integrated with thermodynamics. Solidification is a success story for quantitative kinetics analysis. The work reported concentrates on phase selection under extreme processing - large undercooling or ultrarapid quenching - of the liquid. Theoretical treatments are concerned mainly with the analysis of morphological instabilities during directional solidification at more conventional rates. The coverage of particle-beam effects is distinguished by the materials studied: alkali halides, minerals, semiconductors and metals. The thermodynamics of interfaces are a particular focus, especially in connection with the solid-state formation of amorphous phases. A highlight of the book is the coverage of the Johnson-Mehl-Avrami-Kolmogorov analysis of overall transformation kinetics. This venerable treatment is revisited and new insights and limitations are explored. Topics include: transformations in undercooled liquids; directional solidification; particle beam-induced transformations; interfaces - thermodynamics and reactions; amorphous materials - structure and transformations; solid-state transformations and ordering and phase separation.