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The general subject of this program is that of development of new or adapt existing methods for the preparation, growth and characterization of III - V electronic and optoelectronic materials for MOCVD technique. Investigations will be conducted on the growth of epitaxial layers using organometallic chemical vapor deposition method of selected III - V materials which are potentially useful for photonics and microwave devices. Keywords: Indium phosphide, Epitaxy, Metal organic chemical, Gallium arsenide, Substrate, Vapor deposition. (JES).