Download Free Epitaxial Graphene On Silicon Carbide Book in PDF and EPUB Free Download. You can read online Epitaxial Graphene On Silicon Carbide and write the review.

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics. Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS). Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries. - Explores the graphene preparation techniques, including epitaxial growth on silicon carbide, chemical vapor deposition (CVD), chemical derivation, and electrochemical exfoliation - Focuses on the characterization of graphene using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy - A comprehensive resource for academics, materials scientists, and electrical engineers
Graphene is a perfectly two-dimensional single-atom thin membrane with zero bandgap. It has attracted huge attention due to its linear dispersion around the Dirac point, excellent transport properties, novel magnetic characteristics, and low spin-orbit coupling. Graphene and its nanostructures may have potential applications in spintronics, photonics, plasmonics and electronics. This book brings together a team of experts to provide an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It covers the state-of-the-art in tutorial-like and review-like manner to make the book useful not only to experts, but also newcomers and graduate students.
Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. - Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists - Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials - Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Since the late 20th century, graphene-a one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice-has garnered appreciable attention as a potential next-generation electronic material due to its exceptional properties. These properties include high current density, ballistic transport, chemical inertness,
ICSCRM 2011Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
A detailed primer describing the most effective theoretical and computational methods and tools for simulating graphene-based systems.
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.