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This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Dutch commentators repeatedly claim that their nation has forgotten its violent colonial past. In this compelling study, however, Paul Bijl demonstrates that photographs of colonial atrocities have appeared consistently in the Dutch public sphere and remain widely available in print, on television, and online. The nation, he argues, has not forgotten; rather, the Dutch have failed to absorb the meaning of these ubiquitous images and the scenes they depict. Ultimately, Bijl illuminates the shadowy zone between remembering and forgetting a zone populated by histories that do not correspond to the narratives we construct about the past.
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
This volume describes computing innovation using non-volatile memory for a sustainable world. The text presents methods of design and implementation for non-volatile memory, allowing devices to be turned off normally when not in use, yet operate with full performance when needed.
The book intends to bring under one roof research work of leading groups from across the globe working on advanced applications of emerging memory technology nanodevices. The applications dealt in the text will be beyond conventional storage application of semiconductor memory devices. The text will deal with material and device physical principles that give rise to interesting characteristics and phenomena in the emerging memory device that can be exploited for a wide variety of applications. Applications covered will include system-centric cases such as – caches, NVSRAM, NVTCAM, Hybrid CMOS-RRAM circuits for: Machine Learning, In-Memory Computing, Hardware Security - RNG/PUF, Biosensing and other misc beyond storage applications. The book is envisioned for multi-purpose use as a textbook in advanced UG/PG courses and a research text for scientists working in the domain.
This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc. The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the “memory wall.” The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification; hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named “Moguls” is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.
Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system. This is driven by the requirements of data-intensive applications in artificial intelligence, autonomous systems, and edge computing. We are at an exciting time in the semiconductor industry where several innovative device and technology concepts are being developed to respond to these demands, and capture shares of the fast growing market for AI-related hardware. This special issue is devoted to highlighting, discussing and presenting the latest advancements in this area, drawing on the best work on emerging memory devices including magnetic, resistive, phase change, and other types of memory. The special issue is interested in work that presents concepts, ideas, and recent progress ranging from materials, to memory devices, physics of switching mechanisms, circuits, and system applications, as well as progress in modeling and design tools. Contributions that bridge across several of these layers are especially encouraged.
While there are many books on retrospective memory, or remembering past events, Prospective Memory: An Overview and Synthesis of an Emerging Field is the first authored text to provide a straightforward and integrated foundation to the scientific study of memory for actions to be performed in the future. Authors Mark A. McDaniel and Gilles O. Einstein present an accessible overview and synthesis of the theoretical and empirical work in this emerging field. Key Features: Focuses on students rather than researchers: While there are many edited works on prospective memory, this is the first authored text written in an accessible style geared toward students. Provides a general approach for the controlled, laboratory study of prospective memory: The authors place issues and research on prospective memory within the context of general contemporary themes in psychology, such as the issue of the degree to which human behavior is mediated by controlled versus automatic processes. Investigates the cognitive processes that underlie prospective remembering: Examples are provided of event-based, time-based, and activity-based prospective memory tasks while subjects are engaged in ongoing activities to parallel day-to-day life. Suggests fruitful directions for further advancement: In addition to integrating what is now a fairly loosely connected theoretical and empirical field, this book goes beyond current work to encourage new theoretical insights. Intended Audience: This relatively brief book is an excellent supplemental text for advanced undergraduate and graduate courses such as Memory, Human Memory, and Learning & Memory in the departments of psychology and cognitive science.
Based on decades of established research findings in cognitive and developmental psychology, this volume explores and integrates the leading scientific advances into infancy and brain-memory linkages as well as autobiographical and strategic memory. In addition, given that the predominantly classic research on memory development has recently been complemented by more cutting-edge applied research (e.g., eyewitness memory, memory development in educational contexts) in recent years, this volume also provides in-depth and up-to-date coverage of these emerging areas of study.