Download Free Electronic Transitions And Correlation Effects Book in PDF and EPUB Free Download. You can read online Electronic Transitions And Correlation Effects and write the review.

Macroscopic properties of real materials, such as conductivity, magneticproperties, crystal structure parameters, etc. are closely related or evendetermined by the configuration of their electrons, characterized by electronicstructure. By changing the conditions, e.g, pressure, temperature, magnetic/electric field, chemical doping, etc. one can modify the electronic structure ofsolids and therefore induce a phase transition(s) between different electronic andmagnetic states. One famous example is a Mott metal-to-insulator phase transition,at which a material undergoes a significant, often many orders of magnitude, changeof conductivity caused by the interplay between itineracy and localization of thecarriers. Electronic topological transitions (ETT) involvechanges in the topology of a metal's Fermi surface. This thesis investigates theeffect of such electronic transitions in various materials, ranging from pureelements to complex compounds. To describe the interplay between electronic transitionsand properties of real materials,different state-of-the-art computational methods are used. The densityfunctional theory(DFT), as well as the DFT + U method, is used to calculatestructural properties. The validity of recently introduced exchange-correlationfunctionals, such as the strongly constrained and appropriately normed (SCAN)functional, is also assessed for magnetic elements. In order toinclude dynamical effects of electron interactions we use the DFT + dynamical meanfield theory (DFT + DMFT) method. Experiments in hcp-Os have reported peculiarities in the ratio betweenlattice parameters at high pressure. Previous calculations have suggested these transitions maybe related to ETTs and even crossings of core levels at ultra high pressure. Inthis thesis it is shownthat the crossing of core levels is a general feature of heavy transitionmetals. Experiments have therefore been performed to look for indications ofthis transition in Ir using X-ray absorption spectroscopy. In NiO, strongrepulsion between electrons leads to a Mott insulating state at ambientconditions. It has long been predicted that high pressure will lead to aninsulator-to-metal transition. This has been suggested to be accompanied by aloss of magnetic order, and a structural phase transition. In collaboration withexperimentalists we look for thistransition by investigating the X-ray absorption spectra as well as themagnetic hyperfine field. We find no evidence of a Mott transition up to 280GPa. In the Mott insulator TiPO4, application of external pressure has beensuggested to lead to a spin-Peierls transition at room temperature. Weinvestigate the dimerisation and the magnetic structure of TiPO4 at high pressure.As pressure is increased further, TiPO4 goes through a metal to insulatortransition before an eventual crystallographic phase transition. Remarkably, thenew high pressure phases are found to be insulators; the Mott insulating stateis restored. MAX phases are layered materials that combinemetallic and ceramic properties and feature layers of M-metal and X-C or N atomsinterconnected by A-group atoms. Magnetic MAX-phases with their low dimensionalmagnetism are promising candidates for applications in e.g., spintronics.The validity of various theoretical approaches are discussed in connection tothe magnetic MAX-phase Mn2GaC. Using DFT and DFT + DMFT we consider the hightemperature paramagnetic state, and whether the magnetic moments are formed bylocalized or itinerant electrons. Ett materials makroskopiska egenskaper, såsom ledningsförmåga, magnetiska egenskaper, kristallstrukturparametrar, etc. är relaterade till, eller till och med bestämda av elektronernas konfiguration, vilken karakteriseras av elektronstrukturen. Genom att ändra förhållandena, till exempel via tryck, temperatur, magnetiska och/eller elektriska fält, dopning, etc. är det möjligt att modifiera elektronstrukturen hos ett material, och därigenom inducera fasövergångar mellan olika magnetiska och elektron-tillstånd. Mott metall-till-isolator övergången är ett berömt exempel på en fasövergång, då ett material genomgår en omfattande, ofta flera tiopotenser, förändring i ledningsförmåga, orsakad av samspelet mellan ambulerande och lokaliserade laddningsbärare. Vid en elektronisk-topologisk övergång (eng. electronic topological transition, ETT) sker förändringar i elektronernas energifördelning vilket modifierar materialets Fermi-yta. I den här avhandlingen undersöks dylika övergångar i olika material, från rena grundämnen till komplicerade föreningar. Flera olika toppmoderna beräkningsmetoder används för att redogöra för samspelet mellan elektroniska fasövergångar och egenskaper hos riktiga material. Täthetsfunktionalterori (eng. density functional theory, DFT), samt DFT + U, har används för att beräkna strukturella egenskaper. Lämplighetsgraden i att använda nyligen publicerade exchangecorrelation- funktionaler, såsom SCAN (eng. strongly constrained and appropriately normed), för att beskriva magnetiska grundämnen undersöks även. För att inkludera dynamiska elektronkorrelationer använder vi metoden DFT + dynamisk medelfältteori (eng. dynamical mean field theory, DMFT). Experiment utförda på hcp-Os vid högt tryck visar underliga hopp i kvoten mellan gitterparametrar. Tidigare beräkningar har indikerat att dessa övergångar kan vara relaterade till elektronisk-topologiska övergångar och korsande av kärntillstånd. I den här avhandlingen visas också att korsning av kärntillstånden är en generell egenskap hos tunga övergångsmetaller. Därför utförs röntgenabsorptionsexperiment på Ir för att leta efter tecken på denna typ av övergång. Övergångsmetalloxiden NiO har sedan länge förutspåtts genomgå en isolator till metall Mott-övergång. Det har föreslagits att denna övergång sker vid höga tryck i samband med att materialets magnetiska ordning försvinner och en strukturell övergång sker. I samarbete med experimentalister letar vi efter denna övergång genom att studera röntgenabsorptionsspektra och det magnetiska hyperfina fältet. Vi ser inga indikationer på en Mott-övegång, upp till ett tryck på 280 GPa. Det har föreslagits att Mott-isolatorn TiPO4 genomgår en så kallad spin-Peierls-övergång, vid rumstemperatur, när tryck appliceras. Vi undersöker dimeriseringen och den magnetiska strukturen i TiPO4 som funktion av tryck. Vid höga tryck genomgår TiPO4 ytterligare övergångar, från en isolerande till en metallisk fas för att slutligen genomgå en strukturell övergång. De nya högtrycksfaserna visar sig anmärkningsvärt vara Mott-isolatorer. MAX-faser är en grupp material med specifik kristallstruktur, som kombinerar egenskaper från keramiska material och metaller. En MAX-fas består av lager av M –metall-atomer – och X – kol- eller kväveatomer – vilka sammanbinds av atomer från grupp A. Magnetiska MAX-faser som visar magnetiska egenskaper, liknande de för lågdimensionella material, är lovande kandidater för applikation inom exempelvis spinntronik. Den här avhandlingen undersöker lämplighetsgraden i att använda diverse teoretiska metoder för att beskriva magnetiska MAX-faser. Med hjälp av DFT och DFT + DMFT undersöker vi den paramagnetiska högtemperaturfasen och huruvida de magnetiska momenten bildas av lokaliserade eller ambulerande elektroner.
Advances in nanoscale science show that the properties of many materials are dominated by internal structures. In molecular cases, such as window glass and proteins, these internal structures obviously have a network character. However, in many partly disordered electronic materials, almost all attempts at understanding are based on traditional continuum models. This workshop focuses first on the phase diagrams and phase transitions of materials known to be composed of molecular networks. These phase properties characteristically contain remarkable features, such as intermediate phases that lead to reversibility windows in glass transitions as functions of composition. These features arise as a result of self-organization of the internal structures of the intermediate phases. In the protein case, this self-organization is the basis for protein folding. The second focus is on partly disordered electronic materials whose phase properties exhibit the same remarkable features. In fact, the phenomenon of High Temperature Superconductivity, discovered by Bednorz and Mueller in 1986, and now the subject of 75,000 research papers, also arises from such an intermediate phase. More recently discovered electronic phenomena, such as giant magnetoresistance, also are made possible only by the existence of such special phases. This book gives an overview of the methods and results obtained so far by studying the characteristics and properties of nanoscale self-organized networks. It demonstrates the universality of the network approach over a range of disciplines, from protein folding to the newest electronic materials.
Advances in the physics and chemistry of low-dimensional systems have been really magnificent in the last few decades. Hundreds of quasi-one-dimensional and quasi-two-dimensional systems have been synthesized and studied. The most popular representatives of quasi-one-dimensional materials are polyacethylenes CH [1] and conducting donor-acceptor molecular crystals TIF z TCNQ. Examples of quasi-two-dimensional systems are high temperature su perconductors (HTSC) based on copper oxides LA2CU04, YBa2Cu306+y and organic superconductors based on BEDT -TIP molecules. The properties of such one- and two-dimensional materials are not yet fully understood. On the one hand, the equations of motion of one-dimensional sys tems are rather simple, which facilitates rigorous solutions of model problems. On the other hand, manifestations of various interactions in one-dimensional systems are rather peculiar. This refers, in particular, to electron--electron and electron-phonon interactions. Even within the limit of a weak coupling con stant electron--electron correlations produce an energy gap in the spectrum of one-dimensional metals implying a Mott transition from metal to semiconductor state. In all these cases perturbation theory is inapplicable. Which is one of the main difficulties on the way towards a comprehensive theory of quasi-one-dimensional systems. - This meeting held at the Institute for Theoretical Physics in Kiev May 15-18 1990 was devoted to related problems. The papers selected for this volume are grouped into three sections.
The electrons in inversion or accumulation layers of MOSFETs or in semiconductor-semiconductor interfaces show prominent many-body effects. A new theory off the correlation energy is developed for these electrons such that the results are applicable to a wide density range. The ground-state energy is obtained for all densities. It is continuous and convergent, but changes its analytical form at r sub s = 1.414. Associated with this change is a divergence of the compressibility that occurs at r sub s =1.989. Hence, around this r sub s, the system can be considered to be in a liquidlike state. In the (001) direction of silicon inversion layers, the two valleys, occupied equally by the electrons at high densities, may be populated unevenly due to electron correlations. This unbalance will cause a valley occupancy phase transition at r sub s =8.011, in close agreement with a recent experiment. Under a magnetic field, the susceptibility is enhanced nonlinearly when the density of electrons is reduced. This enhancement becomes very strong toward r sub s =13.0, beyond which a spin-polarized state is favored.
This reference describes the latest research on correlation effects in the multicenter problems of atoms, molecules, and solids. The author utilizes first- and second-order matrices, including the important observable electron density rho(r), and the Green function for discussing quantum computer simulations. With its focus on concepts and theories, this volume will benefit experimental physicists, materials scientists, and physical and inorganic chemists as well as graduate students.
This volume, the proceedings of a 1998 international workshop, provides experimental evidence of the effects of correlation on the physical, chemical, and mechanical properties of materials, as well as the theoretical/computational methodology that has been developed for their study.
The concept of electron correlation is fundamental to condensed matter physics, playing an important role in systems including high temperature superconductors, heavy fermions, manganite compounds with colossal magnetoresistance, transition metal compounds with metal-insulator transitions, and mesoscopic systems like quantum dots and carbon nanotubes. The dialogue between experimentalists and theoreticians presented here is an assessment of our current understanding of the field; one that sets the agenda for future work.
Correlation Effects in Low-Dimensional Electron Systems describes recent developments in theoretical condensed-matter physics, emphasizing exact solutions in one dimension including conformal-field theoretical approaches, the application of quantum groups, and numerical diagonalization techniques. Various key properties are presented for two-dimensional, highly correlated electron systems.
The book includes all main physical properties of d- and f-transition-metal systems and corresponding theoretical concepts. Special attention is paid to the theory of magnetism and transport phenomena. Some examples of non-traditional questions which are treated in detail in the book: the influence of density of states singularities on electron properties; many-electron description of strong itinerant magnetism; mechanisms of magnetic anisotropy; microscopic theory of anomalous transport phenomena in ferromagnets. Besides considering classical problems of solid state physics as applied to transition metals, modern developments in the theory of correlation effects in d- and f-compounds are considered within many-electron models. The book contains, where possible, a simple physical discussion. More difficult questions are considered in Appendices.