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This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
This volume of the "Journal of Nano Research" includes peer-reviewed articles reflecting the practical research results in the synthesis and properties analysis of nanomaterials and nanoparticles for various engineering goals - photocatalytic applications, micro- and optoelectronics, photovoltaic and electrochemical use in solar cells and energy storage devices, for applications in biomedicine, creating protective coatings, etc. The presented articles collection will be helpful to specialists from many branches of engineering whose activity is related to nanomaterials and nanotechnologies.
"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.
As the global community confronts challenges in energy, environment, health, agriculture, industry, and construction, the significance of sustainable materials becomes paramount. The looming specter of resource depletion necessitates a paradigm shift, urging researchers and engineers to anticipate future needs and forge materials that align with evolving requirements. Next Generation Materials for Sustainable Engineering underscores the urgency of conserving resources and provides a blueprint for achieving this through judicious and sustainable use. From polymers to alloys, nanocomposites to biomaterials, this book traverses the expansive landscape of materials, deciphering their structures and properties with an eye toward sustainability. The relentless pursuit of innovation in synthesis protocols takes center stage, unveiling pathways to creating novel materials. The chapters dedicated to specific material applications, such as spintronics, nanowires, phase change materials, and nanocomposites, offer a detailed panorama of the latest advancements. This book bridges the gap between theoretical understanding and practical applications by exploring materials for renewable energy, electronic devices, artificial photosynthesis, lithium-sulfur batteries, supercapacitors, and biomedical applications. The book serves as a beacon for academicians, researchers, and material scientists, guiding them through state-of-the-art developments, emerging trends, and challenges in material science and engineering.
Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations
This book is a comprehensive guide on emerging cooling technologies for processors in microelectronics. It covers various topics such as chip-embedded two-phase cooling, monolithic microfluidic cooling, numerical modeling, and advances in materials engineering for conduction-limited direct contact cooling, with a goal to remedy high heat flux issues.The book also discusses the co-design of thermal and electromagnetic properties for the development of light and ultra-high efficiency electric motors. It provides an in-depth analysis of the scaling limits, challenges, and opportunities in embedded cooling, including high power RF amplifiers and self-emissive and liquid crystal displays. Its analysis of emerging cooling technologies provides a roadmap for the future of cooling technology in microelectronics.This book is a good starting point for the electrical and thermal engineers, as well as MS and PhD students, interested in understanding and collaboratively tackling the complex and multidisciplinary field of microelectronics device (embedded) cooling. A basic knowledge of heat conduction and convection is required.
Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly being replaced with carbon-based electronics, devices are being reduced down to nanometer scale, and further potential applications are being considered. While traditionally, engineers are trained by way of physics, chemistry, and mathematics, Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles establishes biology as an essential basic science for engineers to explore. Unifies Science and Engineering: from Quantum Physics to Nanoengineering Drawing heavily on published papers by the author, this research-driven text offers a complete review of nanoelectronic transport starting from quantum waves, to ohmic and ballistic conduction, and saturation-limited extreme nonequilibrium conditions. In addition, it highlights a new paradigm using non-equilibrium Arora’s Distribution Function (NEADF) and establishes this function as the starting point (from band theory to equilibrium to extreme nonequilibrium carrier statistics). The author focuses on nano-electronic device design and development, including carbon-based devices, and provides you with a vantage point for the global outlook on the future of nanoelectronics devices and ULSI. Encompassing ten chapters, this illuminating text: Converts the electric-field response of drift velocity into current–voltage relationships that are driven by the presence of critical voltage and saturation current arising from the unidirectional drift of carriers Applies the effect of these scaled-down dimensions to nano-MOSFET (metal–oxide–semiconductor field-effect transistor) Considers specialized applications that can be tried through a number of suggested projects that are all feasible with MATLAB® codes Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles contains the latest research in nanoelectronics, identifies problems and other factors to consider when it comes to nanolayer design and application, and ponders future trends. Print Versions of this book also include access to the ebook version.