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An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.
Interfacial science has rapidly expanded beyond the original realm of chemistry to include physics, mechanical and chemical engineering, biology, materials science, and other specialized sub-fields. All of these scientific disciplines come together in this book to share viewpoints and bridge gaps among the different approaches and methods presented. Discussions focus on how ultrasmall geometries can force a system to behave in ways significantly different than it behaves in bulk, how this difference affects molecular properties, and how it is probed. Topics include: probing confined systems; structure and dynamics of thin films; nanorheology; diffusion in porous systems; adsorption and phase transitions; and reaction dynamics.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.