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Theory of Electric Polarization, Volume II: Dielectrics in Time-Dependent Fields focuses on the processes, reactions, and principles involved in the application of dielectrics in time-dependent fields, as well as the Kerr effect, statistical mechanics, and polarization. The publication first examines the phenomenological theory of linear dielectrics in time-dependent fields; empirical description of dielectric relaxation; and the relationship between macroscopic and molecular dielectric relaxation behavior. Concerns cover the relationship between macroscopic and microscopic correlation functions; statistical mechanics of linear dissipative systems and the relationship between response functions and correlation functions; superpositions of distribution functions; and the use of complex dielectric constant in problems with time-dependent field sources. The book then ponders on the dipole correlation function, polarization in the infrared and optical frequency range, and the Kerr effect and related phenomena. Discussions focus on the Kerr effect in condensed systems, extensions of the Kerr effect, extrapolation of the refractive index to infinite wavelength, results obtained from computer simulations, rotational diffusion, and general aspects of molecular reorientation. The manuscript tackles the dielectric properties of molecular solids and liquid crystals and experimental determination of permanent dipole and quadrupole moments. The text is a valuable source of data for researchers interested in the application of dielectrics in time-dependent fields.
The chase and ultimate destruction of the German Battleship Bismarck in May 1941 is one of the epic stories of the naval side of World War II. It is told here in detail for the first time in English, full use having been made of the information now available from both British and German sources.--Dust jacket.
Dielectric Polymer Materials for High-Density Energy Storage begins by introducing the fundamentals and basic theories on the dielectric behavior of material. It then discusses key issues on the design and preparation of dielectric polymer materials with strong energy storage properties, including their characterization, properties and manipulation. The latest methods, techniques and applications are explained in detail regarding this rapidly developing area. The book will support the work of academic researchers and graduate students, as well as engineers and materials scientists working in industrial research and development. In addition, it will be highly valuable to those directly involved in the fabrication of capacitors in industry, and to researchers across the areas of materials science, polymer science, materials chemistry, and nanomaterials. Focuses on how to design and prepare dielectric polymer materials with strong energy storage properties Includes new techniques for adjusting the properties of dielectric polymer materials Presents a thorough review of the state-of-the-art in the field of dielectric polymer materials, providing valuable insights into potential avenues of development
The Handbook of Semiconductor Manufacturing Technology describes the individual processes and manufacturing control, support, and infrastructure technologies of silicon-based integrated-circuit manufacturing, many of which are also applicable for building devices on other semiconductor substrates. Discussing ion implantation, rapid thermal processing, photomask fabrication, chip testing, and plasma etching, the editors explore current and anticipated equipment, devices, materials, and practices of silicon-based manufacturing. The book includes a foreword by Jack S. Kilby, cowinner of the Nobel Prize in Physics 2000 "for his part in the invention of the integrated circuit."
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.
This book covers the theoretical basis and practical aspects of the study of dielectric properties of biological systems, such as water, electrolyte and polyelectrolytes, solutions of biological macromolecules, cells suspensions and cellular systems.
All engineers could bene?t from at least one course in reliability physics and engineering. It is very likely that, starting with your very ?rst engineering po- tion, you will be asked — how long is your newly developed device expected to last? This text was designed to help you to answer this fundamentally important question. All materials and devices are expected to degrade with time, so it is very natural to ask — how long will the product last? The evidence for material/device degradation is apparently everywhere in nature. A fresh coating of paint on a house will eventually crack and peel. Doors in a new home can become stuck due to the shifting of the foundation. The new ?nish on an automobile will oxidize with time. The tight tolerances associated with ?nely meshed gears will deteriorate with time. Critical parameters associated with hi- precision semiconductor devices (threshold voltages, drive currents, interconnect resistances, capacitor leakages, etc.) will degrade with time. In order to und- stand the lifetime of the material/device, it is important to understand the reliability physics (kinetics) for each of the potential failure mechanisms and then be able to develop the required reliability engineering methods that can be used to prevent, or at least minimize the occurrence of, device failure.
Both an introductory course to broadband dielectric spectroscopy and a monograph describing recent dielectric contributions to current topics, this book is the first to cover the topic and has been hotly awaited by the scientific community.