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The second workshop on Desorption Induced by Electronic Transitions (DIET II) took place October 15-17, 1984, in SchloB Elmau, Bavaria. DIET II, fol lowing the great success of DIET I (edited by N. H. Tolk, M. M. Traum, J. C. Tully, T. E. Madey and published in Springer Ser. Chem. Phys. , Vol. 24), again brought together over 60 workers in this exciting field. The "hard co re of experts" was essentially the same as in DIET I but the general overlap of participants between the two meetings was small. While DIET I had the function of an exposition of the status of the field DIET II focussed more on new developments. The main emphasis was again on the microscopic under standing of DIET but a number of side aspects and the application of DIET ideas to other fields such as sputtering, laser-induced desorption, fractu re, erosion, etc. were considered, too. New mechanisms and new refined expe rimental techniques were proposed and discussed at the meeting critically but with great enthusiasm. In addition to the talks, there was a continuous poster exhibition which also stimulated extended and excited discussions. This book is a collection of papers summarizing the talks and posters presented at the meeting.
This volume in the Springer Series on Surface Sciences presents a recent account of advances in the ever-broadening field of electron-and photon-stimulated sur face processes. As in previous volumes, these advances are presented as the proceedings of the International Workshop on Desorption Induced by Electronic Transitions; the fifth workshop (DIET V) was held in Taos, New Mexico, April 1-4, 1992. It will be abundantly clear to the reader that "DIET" is not restricted to desorption, but has for several years included photochemistry, non-thermal surface modification, exciton self-trapping, and many other phenomena that are induced by electron or photon bombardment. However, most stimulated surface processes do share a common physics: initial electronic excitation, localization of the excitation, and conversion of electronic energy into nuclear kinetic energy. It is the rich variation of this theme which makes the field so interesting and fruitful. We have divided the book into eleven parts in order to emphasize the wide range of materials that are examined and to highlight recent experimental and theoretical advances. Naturally, there is considerable overlap between sections, and many papers would be appropriate in more than one part. Part I focuses on perhaps the most active area in the field today: electron attachment. Here the detection and characterization of negative ions formed by attachment of elec trons supplied externally from the vacuum are discussed. In addition, the first observations of negative ions formed by substrate photoelectrons are presented.
These proceedings are the result of the third international workshop on Desorption Induced by Electronic Transitions, DIET III, which took place on Shelter Island, NY, May. 20-22, 1987. The work contained in this volume is an excellent summary of the current status of the field and should be a valuable reference text for both "seasoned" researchers and newcomers in the field of DIET. Based on the success of the meeting it seems clear that interest and enthusiasm in the field is strong. It is also apparent, from the many lively discussions during the meeting, that many unanswered questions (and controversies) remain to be solved. It was particularly pleasing to see many new participants from new and rapidly advancing fields, ranging from gas phase dynamics to semiconductor processing. The resulting cross-fertilization from these separate but related fields is playing an important role in helping us understand desorption processes at solid surfaces. In general, the topics covered during the course of the workshop over lapped those of both DIET I and DIET II. However, clear advances have been made and in general there is a much more sophisticated understand ing of the physics and chemistry of stimulated desorption. Of particular note in this regard is the gas phase research highlighted in this workshop by the work of Nenner et al. , where new results indicate that in the gas phase, photodissociation can precede or compete strongly with autoion ization and other electronic relaxation pathways.
This book is the latest to appear in a series documenting the progress of this exciting field in surface science. It presents recent results and reviews of the rapidly growing field of interaction of particles and lasers with solid surfaces leading to excitation, ionisation and desorption. The main emphasis is on the microscopic understanding of DIET, especially electron- and ion-induced desorption of adsorbed layers, emission from insulators, laser-induced desorption and ablation, photophysics and photochemistry. Applications ranging from laser ablation for medical purposes to DIET in high-temperature superconductors are also described.
Transmission electron microscopy (TEM) is now recognized as a crucial tool in materials science. This book, authored by a team of expert Chinese and international authors, covers many aspects of modern electron microscopy, from the architecture of novel electron microscopes, advanced theories and techniques in TEM and sample preparation, to a variety of hands-on examples of TEM applications. Volume 2 illustrates the important role that TEM is playing in the development and characterization of advanced materials, including nanostructures, interfacial structures, defects, and macromolecular complexes.
Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and the broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those in STM I, these studies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described in chapters on scanning force microscopy, magnetic force microscopy, and scanning near-field optical microscopy, together with a survey of other related techniques. Also discussed here is the use of a scanning proximal probe for surface modification. Together, the two volumes give a comprehensive account of experimental aspects of STM and provide essential reading and reference material. In this second edition the text has been updated and new methods are discussed.
Graph grammars originated in the late 60s, motivated by considerations about pattern recognition and compiler construction. Since then, the list of areas which have interacted with the development of graph grammars has grown quite impressively. Besides the aforementioned areas, it includes software specification and development, VLSI layout schemes, database design, modeling of concurrent systems, massively parallel computer architectures, logic programming, computer animation, developmental biology, music composition, visual languages, and many others.The area of graph grammars and graph transformations generalizes formal language theory based on strings and the theory of term rewriting based on trees. As a matter of fact, within the area of graph grammars, graph transformation is considered as a fundamental computation paradigm where computation includes specification, programming, and implementation. Over the last three decades, graph grammars have developed at a steady pace into a theoretically attractive and important-for-applications research field.Volume 2 of the indispensable Handbook of Graph Grammars and Computing by Graph Transformations considers applications to functional languages, visual and object-oriented languages, software engineering, mechanical engineering, chemical process engineering, and images. It also presents implemented specification languages and tools, and structuring and modularization concepts for specification languages. The contributions have been written in a tutorial/survey style by the top experts in the corresponding areas. This volume is accompanied by a CD-Rom containing implementations of specification environments based on graph transformation systems, and tools whose implementation is based on the use of graph transformation systems.
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Transmission electron microscopy (TEM) is now recognized as a crucial tool in materials science. This book, authored by a team of expert Chinese and international authors, covers many aspects of modern electron microscopy, from the architecture of novel electron microscopes, advanced theories and techniques in TEM and sample preparation, to a variety of hands-on examples of TEM applications. Volume I concentrates on the newly developed concepts and methods which are making TEM a powerful and indispensible tool in materials science.
The present monograph represents itself as a tutorial to the ?eld of optical properties of thin solid ?lms. It is neither a handbook for the thin ?lm prac- tioner,noranintroductiontointerferencecoatingsdesign,norareviewonthe latest developments in the ?eld. Instead, it is a textbook which shall bridge the gap between ground level knowledge on optics, electrodynamics, qu- tummechanics,andsolidstatephysicsononehand,andthemorespecialized level of knowledge presumed in typical thin ?lm optical research papers on the other hand. In writing this preface, I feel it makes sense to comment on three points, which all seem to me equally important. They arise from the following (- tually interconnected) three questions: 1. Who can bene?t from reading this book? 2. What is the origin of the particular material selection in this book? 3. Who encouraged and supported me in writing this book? Let me start with the ?rst question, the intended readership of this book. It should be of use for anybody, who is involved into the analysis of - tical spectra of a thin ?lm sample, no matter whether the sample has been prepared for optical or other applications. Thin ?lm spectroscopy may be r- evant in semiconductor physics, solar cell development, physical chemistry, optoelectronics, and optical coatings development, to give just a few ex- ples. The book supplies the reader with the necessary theoretical apparatus for understanding and modelling the features of the recorded transmission and re?ection spectra.