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Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to 1180 nm, and the ability to achieve high output powers. The often used longitudinal-invariant Fabry-Pérot-type resonators are easy to design but often lead to functionality or performance limitations. In this work, the application of laterally-longitudinally non-uniform resonator configurations is explored as a way to reduce unwanted and performance-limiting effects. The investigations are carried out on existing and entirely newly developed laser designs using dedicated simulation tools. These include a sophisticated time-dependent laser simulator based on a traveling-wave model of the optical fields in the lateral-longitudinal plane and a Maxwell solver based on the eigenmode expansion method for the simulation of passive waveguides. Whenever possible, the simulation results are compared with experimental data. Based on this approach, three fundamentally different laser types are investigated: • Dual-wavelength lasers emitting two slightly detuned wavelengths around 784 nm out of a single aperture • Ridge-waveguide lasers with tapered waveguide and contact layouts that emit light of a wavelength of around 970 nm • Broad-area lasers with slightly tapered contact layouts emitting at 910 nm The results of this thesis underline the potential of lateral-longitudinal non-uniform laser designs to increase selected aspects of device performance, including beam quality, spectral stability, and output power.
Foreword by Charles H Townes This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers.As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport.
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.
Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. - Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software - Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters - Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices
Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.
The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.
This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in semiconductor lasers are discussed, but also for example the method of self-mixing interferometry in quantum-cascade lasers, which is indispensable in practical applications. Further, this edition covers chaos synchronization between two lasers and the application to secure optical communications. Another new topic is the consistency and synchronization property of many coupled semiconductor lasers in connection with the analogy of the dynamics between synaptic neurons and chaotic semiconductor lasers, which are compatible nonlinear dynamic elements. In particular, zero-lag synchronization between distant neurons plays a crucial role for information processing in the brain. Lastly, the book presents an application of the consistency and synchronization property in chaotic semiconductor lasers, namely a type of neuro-inspired information processing referred to as reservoir computing.