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This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing – Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.
This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.
This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: “Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide” (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), “Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles” (M.Ragam, N.Sankar, K.Ramachandran), “The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl” (L.Chen, Z.Qiu), “Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow” (D.P.Adhikary, A.H.Wilkins), “Theoretical Investigations of the Defect Structure for Ni3+ in ZnO” (Z.H.Zhang, S.Y.Wu, S.X.Zhang).
This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).
This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).
This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes – in line with the policy of including original papers on all of the major material groups: “Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films” (A.Sharma and P.B.Barman), “Structure and Optical Properties of Magnetron-Sputtered SiOx Layers with Silicon Nanoparticles” (L.Khomenkova, N.Korsunska, T.Stara, Y.Goldstein, J.Jedrzejewski, E.Savir, C.Sada and Y.Emirov), “Non-Gaussian Diffusion of Phosphorus and Arsenic in Silicon with Local Density Diffusivity Model” (F.Wirbeleit), “Artificial Aging Behavior of 6063 Alloy Studied using Vickers Hardness and Positron Annihilation Lifetime Techniques” (M.A.Abdel-Rahman, A.El-deen A.El-Nahhas, Y.A.Lotfy and E.A.Badawi), “Analysis of the Solid Solution Microstructure of (HF) Al-Zn Alloys” (H.Bedboudi, A.Bourbia, M.Draissiaa, S.Boulkhessaim and M.Y.Debili), “Liquid-Phase Sintering of Tungsten Heavy Alloys” (S.F.Moustafa, S.H.Kaitbay and G.M.Abdo), “Analysis of Stress Intensity Factor and Crack Propagation for Alloy X-750 Pressure Vessel with a Blunting Crack” (E.Mahdavi, M.M.Mashhadi and M.Amidpour), “Effect of Microstructure upon the Wear Properties of 2.25Cr-1Mo Steel” (B.B.Jha, B.K.Mishra, T.K.Sahoo, P.S.Mukherjee and S.N.Ojha), “Phase and Structure Formation of Metallic Materials Electrodeposited via a Liquid State Stage: New Experimental Proof” (O.Girin), “Testing Natural Aging Effect on Properties of 6066 & 6063 Alloys using Vickers Hardness and Positron Annihilation Lifetime Techniques” (M.A.Abdel-Rahman, A.A.Ahmed and E.A.Badawi), “Investigations of the Gyromagnetic Factors for the Ni3+ Center in MgO” (X.M.Li), “Variable Range Hopping (VRH) Model in Manganese Oxides” (H.Abdullah), “Theoretical Studies of the EPR Parameters for Rh+ in NaCl” (Z.H.Zhang, S.Y.Wu, P.Xu and L.L.Li), “The Effect of Droplet Diameter on the Separation of Heavy-Oil from Water using a Hydrocyclone” (F.P.M.Farias, C.J.O.Buriti, W.C.P.B.Lima, S.R.F. Neto and A.G.B.Lima) and “Spreading Exponents: Dynamics of Trisiloxane Wetting of Hydrophobic Surfaces” (J.Radulovic, K.Sefiane and M.E.R.Shanahan).
Defect and Diffusion Forum Vol. 272
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.