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This second edition of the book, initially written as an introductory text dealing with how electric currents behave at the nanometer scale, begins with a general description of electric currents at the macroscale. Then by considering the physical length scales relevant to electron flow, it is observed how the behavior of currents varies as they approach the nanoscale. A quantum description of electric current is covered as well as its relevance, with particular reference to defects, grain boundaries, tunnelling and atomic contacts, followed by the effects of current flow through nanostructures, including electromigration, of particular relevance for transistor miniaturization. Next, the techniques used to probe currents and voltages at the nanoscale are considered, focusing on scanning-probe microscopy and transport measurements, before considering electronic transport through molecular and single-electron devices.The book will tie together several aspects of current and recent research on the current flow at the nanoscale. Due to the introductory nature of the book, it will not become obsolete quickly, and chapters can be added at will at later stages as new developments arise.
Aimed at a general, physics-literate audience, but also useful for the expert, this text offers a simple, easily applicable introductory approach to understanding current flow. Durkan draws on parallels between macroscopic and quantum descriptions of resistance and Ohm's law
This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices.Theoretical methodology is developed using quantum mechanical and non-equilibrium Green's function (NEGF) techniques to calculate electronic currents and elucidate their transport properties at the atomic scale. The spin Hall effect is explained and its application to the emerging field of spintronics – where an electron's spin as well as its charge is utilised – is discussed. Topological dynamics and gauge potential are introduced with the relevant mathematics, and their application in nanoelectronic systems is explained. Graphene, one of the most promising carbon-based nanostructures for nanoelectronics, is also explored. - Begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics - Encompasses quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices - Comprehensively introduces topological dynamics and gauge potential with the relevant mathematics, and extensively discusses their application in nanoelectronic systems
Advances in nanotechnology have allowed physicists and engineers to miniaturize electronic structures to the limit where finite-size related phenomena start to impact their properties. This book discusses such phenomena and models made for their description. The book starts from the semiclassical description of nonequilibrium effects, details the scattering theory used for quantum transport calculations, and explains the main interference effects. It also describes how to treat fluctuations and correlations, how interactions affect transport through small islands, and how superconductivity modifies these effects. The last two chapters describe new emerging fields related with graphene and nanoelectromechanics. The focus of the book is on the phenomena rather than formalism, but the book still explains in detail the main models constructed for these phenomena. It also introduces a number of electronic devices, including the single-electron transistor, the superconducting tunnel junction refrigerator, and the superconducting quantum bit.
Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations
A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.
'This is one of the best available graduate-level textbooks on electronic transport at the nanoscale. Its unique feature is providing a thorough and completely self-contained treatment of several theoretical formalisms for treating the transport problem. As such, the book is useful not only for the graduate students working in the field of nanoscale electrical transport, but also for the researchers who wish to expand their knowledge of various fundamental issues associated with this rapidly developing field. Of particular note are deep physical insights accompanying the rigorous mathematical derivations in each of the chapters, as well as the clear statement of all the approximations involved in a particular theoretical formalism. This winning combination makes the book very accessible to a reader with basic knowledge of quantum mechanics, solid state theory and thermodynamics/statistical mechanics. I give this book the highest recommendation.' [Read Full Review]Serfei A EgorovUniveristy of Virginia, USAThis book is aimed at senior undergraduates, graduate students and researchers interested in quantitative understanding and modeling of nanomaterial and device physics. With the rapid slow-down of semiconductor scaling that drove information technology for decades, there is a pressing need to understand and model electron flow at its fundamental molecular limits. The purpose of this book is to enable such a deconstruction needed to design the next generation memory, logic, sensor and communication elements. Through numerous case studies and topical examples relating to emerging technology, this book connects 'top down' classical device physics taught in electrical engineering classes with 'bottom up' quantum and many-body transport physics taught in physics and chemistry. The book assumes no more than a nodding acquaintance with quantum mechanics, in addition to knowledge of freshman level mathematics. Segments of this book are useful as a textbook for a course in nano-electronics.