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This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Advances in nanoscale materials processing are taking place at a rapid pace via myriad paths, including lithography, production of nanoparticle assemblies, surface manipulation and many others. Several of the techniques create structures that are three-dimensional or quasi three-dimensional. Even smaller structures intended to be two-dimensional have a 'more' three-dimensional geometry as their two-dimensional feature size and layer thickness become similar. The properties of these denser assemblies are driving different applications in electronics (single-electron devices), optics (photonic crystals and switches) and elsewhere. This 2003 book provides a venue for a productive scientific and technical exchange. The result is a compilation of papers which address fundamental studies, technological advances and novel approaches to developing and processing three-dimensional nanoscale assemblies. Topics include: nanofabrication via lithographic techniques; unconventional fabrication methods of nano-structures; physics, chemistry and modeling of nanostructures; fabrication and properties of 1D nanostructures; fabrication and properties of 3D nanostructures; applications of nanostructures and devices.
There has been a renaissance in glass science brought about by the development of concepts such as fragility index and the energy landscape with megabasins. Research on bulk metallic glasses has been explosive since their advent when MRS offered its first book on the topic. In 2000, a second book broadened the scope to include supercooled liquid, bulk glassy and nanocrystalline states. This book enhances the scope to include glass transition in diverse materials such as water, silicate and polymeric melts. Bringing these threads together in an interdisciplinary manner was fruitful and offers proof that while there is much common ground, gaps between various approaches to the glassy state remain to be bridged. Subjects include: the supercooled liquid; glass formability; structural relaxation and dynamics; structure determination and modeling; processing and applications of bulk metallic glasses; mechanical properties; mechanical properties - composites; crystallization; electronic and magnetic structure and properties; and nanoparticles and nonmetallic glasses.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented.