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The book consists of two parts: Part 1 is a standard text of dislocation theory. Mathematics is avoided as much as possible. Part 2 describes application of dislocation theory, which includes mechanical properties (including the inverse temperature dependence of strength) and dislocations in functional materials such as Si, GaN and SiC and dislocations in a thin crystal such as an epitaxial layer. This is what has been long anticipated among researchers in industry.The book contains about 330 illustrations (mostly originals by the author) and the pictures obtained by the author by means of in-situ experiment in a transmission electron microscope over the past 50 years.This book includes many exercises, which the author found useful when he was teaching in Department of Materials Science and Engineering of Nagoya University to stimulate their interests in dislocation theory.
'Although the study of such defects is regularly examined at length in more general books on electron microscopy, this text in which they are centre-stage will surely be appreciated.' [Read Full Review]UltramicroscopyThis unique reference text provides those who are studying crystal lattice defects using a transmission electron microscope (TEM) with a basic knowledge of transmission electron microscopy. As it has been written for beginners, the principles of both transmission electron microscopy and crystallography have been clearly and simply explained, with the use of many figures and photographs to aid understanding. Mathematics is avoided where possible, and problems and exercises are amply provided.
The proposed existence of the edge and screw dislocation in the 1930s, and the subsequent work showing that dislocation theory could explain the plastic deformation of crystals, represent an important step in developing our understanding of materials into a science. The continued work involved with characterization of dislocations and linking them to a variety of physical properties in both single and poly crystals have made enormous progress over the past 50 years. It is rare to find a technical application involving a material with any crystal structure that is not impacted by dislocations; mechanical properties, massive phase transformations, interphases, crystal growth, electronic properties, the list goes on. In many systems the properties is controlled by the formation of partial dislocations separated by a stacking fault; for example plastic deformation via deformation twinning. And finally, giant strides have been made in characterization and modeling of systems containing dislocations. The Special Issue on “Crystal Dislocations” is intended to provide a unique international forum aimed at covering a broad range of results involving dislocations and their importance on crystal properties and crystal growth. Scientists working in a wide range of disciplines are invited to contribute to this cause.Dr. K. Peter D. Lagerlof, Associate Professor of CeramicsGuest Editor