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Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.
Technology requirements associated with the progressive scaling of devices for future technology nodes, coupled with the aggressive introduction of new materials, places tremendous demands on chemical-mechanical polishing. The goal of this 2005 book, which is part of a popular series from MRS, is to bring together experts from a broad spectrum of research and technology groups currently working on CMP, to review advances made, and to offer a comprehensive discussion of future challenges that must be overcome. The book shows trends in the development of consumables, process modules, tool designs, process integration, modeling, defect characterization, and metrology. Topics include: planarization processes and applications; consumables -CMP pads and slurries; CMP equipment and metrology; and CMP modeling and simulation.
Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: Provides in-depth coverage of a wide range of state-of-the-art technologies and applications Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.
This book describes available tribology technologies and introdces a comprehensive overview of tribology. General, up-to-date knowledge on how tribology is approached in various related areas of research, both experimental and computational is provided.
Actinides are an important, if sometimes unwanted, part of highly technological societies. Actinides pose an extreme scientific challenge to the materials research community. Their complex electronic structure results in many abnormal properties that even today are not well understood. The focus of this book is fundamental actinide science and its role in resolving technical challenges posed by actinide materials. Both basic and applied experimental approaches, as well as theoretical modeling and computational simulations, are featured. Topics for the inaugural actinides symposium include: actinide phase stability, transformations and aging; phononic and electronic structure; actinides and the environment; actinide solution and interfacial chemistry; actinide science and technology; theory of actinides - elemental phases, alloys and compounds; and superconductivity, correlated behavior and quantum criticality.
In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.
Actinides are an important, if sometimes unwanted, part of highly technological societies. Actinides pose an extreme scientific challenge to the materials research community. Their complex electronic structure results in many abnormal properties that even today are not well understood. The focus of this book is fundamental actinide science and its role in resolving technical challenges posed by actinide materials. Both basic and applied experimental approaches, as well as theoretical modeling and computational simulations, are featured. Topics for the inaugural actinides symposium include: actinide phase stability, transformations and aging; phononic and electronic structure; actinides and the environment; actinide solution and interfacial chemistry; actinide science and technology; theory of actinides - elemental phases, alloys and compounds; and superconductivity, correlated behavior and quantum criticality.
Wide-bandgap semiconductors such as SiC, GaN and related alloys, BN and related alloys, ZnGeSiN2, ZnO, and others continue to find new applications in solid-state lighting, sensors, filters, high-power electronics, biological detection, and spintronics. Improved bulk and epitaxial growth, processing, device design, and understanding of the physics of transport in heterostructures are all necessary for realization of these new technologies. The papers in this book span a range of subjects from material growth and characterization to the processing and application of devices in the electronic, as well as the optoelectronic, fields. Topics include: special invited papers; growth, processing and devices; novel applications for wide-bandgap semiconductors; oxides, heterostructures and devices; processing and devices and emerging areas.