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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
A scalable synthesis of the "flat" tridecameric inorganic cluster [Al13([mu]3-OH)6([mu]-OH)1(H2O)24]15 has been realized by treating an aqueous aluminum nitrate solution with zinc-metal powder at room temperature. Single crystals and polycrystalline samples are readily obtained in yields exceeding 55% relative to the starting reagent Al(NO3)3. Products have been characterized by X-ray diffraction and solid-state 27Al MAS and MQMAS NMR. Furthermore, we report a new integrated platform that combines: (i) an atom- & step-economical electrolytic synthesis of Al-containing nanoclusters in water with strict pH control; and (ii) an improved femtosecond stimulated Raman spectroscopic method covering a broad spectral range (350 to 1400 cm−1), aided by ab-initio computations, to elucidate cluster structures and formation mechanisms of the clusters in real time. Using this platform, a new and unique view of flat [Al13([mu]3-OH)6([mu]2-OH)1(H2O)24](NO3)15 cluster formation is observed, in which three distinct stages are identified. The first stage involves the formation of a hypothetical [Al--([mu]3-OH)6([mu]2-OH)6(H2O)12]9 structure as an important intermediate towards the flat Al13. Once the scalable synthesis has been developed, aqueous solution precursor made from "flat" Al13 clusters are used for depositing high quality aluminum oxide thin films. Film structure, morphology, composition, and density at different annealing temperature are characterized by X-ray diffraction, AFM, SEM, TEM, FTIR, and X-ray Reflectivity. Optical properties of the films are investigated by spectroscopic ellipsometry. Simple metal-insulator-semiconductor capacitor test structure is used to evaluate the dielectric properties of the aluminum oxide thin films. After annealing at 500 °C, thin film exhibits low leakage current density (10 nA·cm−2 at 1 MV·cm−1) and high breakdown field ( 6 MV·cm−1). As a gate dielectric layer in thin film transistors with amorphous zinc tin oxide active channel, solution processed aluminum oxide layer exhibit dielectric properties similar to high quality SiO2 gate dielectrics, i.e. low gate leakage current (nA level from -10 V to 30 V) and small clockwise hysteresis. Finally, thin film dielectric material Al(PO4)0.6O0.6·xH2O, or "AlPO" is examined to explore a low-temperature dehydration alternative for the solution-deposited aluminun-oxide based films. As an amorphous oxide insulator, AlPO has been incorporated into thin-film transistors (TFT) via aqueous processing. It is found that the films must be heated above 600 °C to force dehydration and eliminate the mobile protons that cause unstable device operation. Here, we suggest that this dehydration temperature is largely dictated by rearrangements and densification near the surface of the film, as it is heated. A considerable quantity of water (and associated ions) becomes physically trapped in the bulk of the film. High temperatures are then required to promote diffusion and water loss across this surface "crust". A hypothesis is that an appropriate very thin layer of a material having a lower dehydration temperature could be used to inhibit the densification and drying of AlPO in the near-surface region, thereby facilitating continuous water loss at relatively low temperature. Therefore, we choose solution-deposited HfO2 films to alter the AlPO top surface. This material combination effectively decreases the dehydration temperature of AlPO (at about 250 °C), leading to dramatically changes in the dielectric behavior.