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The rates of dissolution of indium phosphide in certain acids at various temperatures were determined. Etching agents are proposed for chemical polishing, finding dislocation pits, and also for detecting single-crystal nature of ingots of indium phosphide without using microstructural investigations. During abrasive treatment of indium phosphide using water, it is found that the source of liberation of phosphine is not only the hydrolysis reaction, but also includes processes leading to the reaction of InP with the products of its oxidation at points of local heating. (Author).
Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
The Analytical Chemistry of Indium is a compilation of information on the analytical chemistry of indium, a metal that is important in optical and electronics industries and a component of certain alloys. The monograph aims to provide factual material available on the analytical chemistry of indium. The book gives an overview of the history and chemical properties of the element indium. Methods for the detection, separation, and determination of indium, including special methods for its determination in industrial and natural products are likewise discussed and evaluated. The text will be of good use to chemists, physicists, materials engineers, researchers, and students.
Invaluable to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fibre optic cables.
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Interaction of the Carbides of Group IV and V Transition Metals with Various Acids.- Method of Quantitative X-ray Analysis for Determining the Amount of Free Carbon in Boron Carbide.- Method of Separating and Determining the Free Carbon in Materials Containing Refractory Compounds.- Stability of Boron-Carbon Compounds in Oxygen at High Temperatures.- Certain Chemical Properties of Boron Carbonitride.- Oxidation of Boron, Gallium, and Indium Phosphides in Air.- High-Temperature Oxidation Resistance of Refractory Silicon Nitride-Silicon Carbide Materials.- Production and Chemical Stability of th.