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The volume is concerned exclusively with all the binary species formed between the elements silicon and fluorine such as SiF, SiF2, SiF3, SiF4, and Sif62-. Most of the volume, i.e. 144 pages, is devoted to the description of the well known physical and chemical properties of the SiF4 as well as to its preparation. This is followed in length by the report on SiF2 with its interesting chemistry, along with a section on the diatomic radical SiF. Species with fivefold and sixfold coordination of silicon are exemplified by SiF5- and by the well known SiF62-. Interestingly, the detailed models for describing the bonding situation in both ions are still a matter of discussion. While for Si2F6 most of the basic data are known, information on the chemical and physical properties of the higher members of the acylic perfluorosilanes, SinF2n+2, is scarce. All available information on the unstable cyclic perfluorosilanes of composition (SiF2)n and some even more exotic species is also included.
Coverage For some time, we have contemplated a comprehensive review of the structures and force fields of the binary fluorides. This bibliography of 1498 references marks the first step of that effort. We are pub lishing this material now rather than waiting until the review is complete some two years hence because we believe that the information already accumulated will be of immediate use to a broad spectrum of researchers. Anyone ambitious enough to read through all the articles on binary fluorides will find that the struc tures and force fields of many of these molecules are at present unknown. For example, it has not been clearly established to which point group(s) the lanthanide trifluorides should be assigned. There remain interesting problems relating to the role of Jahn-Teller and pseudo-Jahn-Teller distortions in some of the transition metal fluorides such as VF , MoF , ReF , and ReF , to name only a few. One s s 6 7 also finds fascinating examples of large-amplitude motions, or pseudorotations, as they are often called, in such molecules as XeF 6, I F 7, and PF 5' For those binary fluorides whose equilibrium geometries are precisely known, there still exists the problem of accurately determining the harmonic force field. In a few cases, most notably the Group VA trifluorides, there has been some attempt made at extracting the cubic and quartic contributions to the force field.
Advances in solid state materials provide an important driving force in the development of modern society, playing a vital role in almost all aspects ofscience and technology. This book presents the contributions to an international workshop on solid state materials, organized to providehands-on experience to scientists from a wide range of relevant disciplines.The topics discussed fall into the categories solid state ionic materials, laser materials, semiconductors and superconducting materials.
ThisvolumeispublishedastheproceedingsoftheRussian-GermanAdvanced Research workshop on Computational Science and High Performance C- puting in Novosibirsk Academgorodok in September 2003. The contributions of these proceedings were provided and edited by the authors, chosen after a careful selection and reviewing. The workshop was organized by the Institute of Computational Techno- gies SB RAS (Novosibirsk, Russia) and the High Performance Computing Center Stuttgart (Stuttgart, Germany). The objective was the discussion of the latest results in computational science and to develop a close coope- tion between Russian and German specialists in the above-mentioned ?eld. The main directions of the workshop are associated with the problems of computational hydrodynamics, application of mathematical methods to the development of new generation of materials, environment protection pr- lems, development of algorithms, software and hardware support for hi- performance computation, and designing modern facilities for visualization of computational modelling results. The importance of the workshop topics was con?rmed by the partici- tion of representatives of major research organizations engaged in the so- tion of the most complex problems of mathematical modelling, development of new algorithms, programs and key elements of new information techno- gies. Among the Russian participants were researchers of the Institutes of the Siberian Branch of the Russian Academy of Sciences: Institute of Com- tational Technologies, Institute of Computational Mathematics and Mat- matical Geophysics, Institute of Computational Modelling, Russian Federal Nuclear Center, All-Russian Research Institute of Experimental Physics, - merovo State University.
Provides an In-depth discussion of surface conditioning for semiconductor applications The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications provides an in-depth discussion of surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet processing is reviewed as well as surface and colloidal aspects of cleaning and etching. Topics covered in this new reference include: Front end line (FEOL) and back end of line (BEOL) cleaning applications such as high-k/metal gate post-etch cleaning and pore sealing, high-dose implant stripping and cleaning, and germanium, and silicon passivation Formulation development practices, methodology and a new directions are presented including chemicals used for preventing corrosion of copper lines, cleaning aluminium lines, reclaiming wafers, and water bonding, as well as the filtering and recirculating of chemicals including reuse and recycling Wetting, cleaning, and drying of features, such as high aspect ratio features and hydrophilic surface states, especially how to dry without watermarks, the abilities to wet hydrophobic surfaces and to remove liquid from deep features The chemical reactions and mechanisms of silicon dioxide etching with hydrofluoric acid, particle removal with ammonium hydroxide/hydrogen peroxide mixture, and metal removal with hydrochloric acid The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications is a valuable resource for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing. Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industries that assures cleanliness of chemicals, material, and equipment in the manufacturing area will also find this handbook an indispensible reference.
Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Specialist Periodical Reports provide systematic and detailed review coverage of progress in the major areas of chemical research. Written by experts in their specialist fields the series creates a unique service for the active research chemist, supplying regular critical in-depth accounts of progress in particular areas of chemistry. For over 80 years the Royal Society of Chemistry and its predecessor, the Chemical Society, have been publishing reports charting developments in chemistry, which originally took the form of Annual Reports. However, by 1967 the whole spectrum of chemistry could no longer be contained within one volume and the series Specialist Periodical Reports was born. The Annual Reports themselves still existed but were divided into two, and subsequently three, volumes covering Inorganic, Organic and Physical Chemistry. For more general coverage of the highlights in chemistry they remain a 'must'. Since that time the SPR series has altered according to the fluctuating degree of activity in various fields of chemistry. Some titles have remained unchanged, while others have altered their emphasis along with their titles; some have been combined under a new name whereas others have had to be discontinued. The current list of Specialist Periodical Reports can be seen on the inside flap of this volume.
Solid-State NMR is a branch of Nuclear Magnetic Resonance which is presently experiencing a phase of strongly increasing popularity. The most striking evidence is the large number of contributions from Solid-State Resonance at NMR meetings, approaching that ofliquid state resonance. Important progress can be observed in the areas of methodological developments and applications to organic and inorganic matter. One volume devoted to more or less one of each of these areas has been published in the preceding three issues. This volume can be considered an addendum to this series. Selected methods and applications of Solid-State NMR are featured in three chapters. The first one treats the recoupling of dipolar interactions in solids, which are averaged by fast sample rotation. Following an introduction to effective Hamiltonians and Floquet theory, different types of experiment such as rotary resonance, dipolar chemical shift correlation spectroscopy, rotational resonance and multipulse recoupling are treated in the powerful Floquet formalism. In the second chapter, the different approaches to line narrowing of quadrupolar nuclei are reviewed in a. consistent formulation of double resonance (DaR) and dynamic angle spinning (DAS). Practical aspects of probe design are considered as well as advanced 2D experiments, sensitivity enhancement techniques, and spinning sideband manipulations. The use of such techniques dramatically increases the number of nuclei which can be probed in high resolution NMR spectroscopy. The final chapter describes new experimental approaches and results of structural studies of noncrystalline solids.