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Session LXIX. 7 - 31 July 1998
Session LXIX. 7 - 31 July 1998
This book honors the remarkable science and life of Shoucheng Zhang, a condensed matter theorist known for his work on topological insulators, the quantum Hall effect, spintronics, superconductivity, and other fields. It contains the contributions displayed at the Shoucheng Zhang Memorial Workshop held on May 2-4, 2019 at Stanford University.
Topological Phases of Matter are an exceptionally dynamic field of research: several of the most exciting recent experimental discoveries and conceptual advances in modern physics have originated in this field. These have generated new, topological, notions of order, interactions and excitations. This text provides an accessible, unified and comprehensive introduction to the phenomena surrounding topological matter, with detailed expositions of the underlying theoretical tools and conceptual framework, alongside accounts of the central experimental breakthroughs. Among the systems covered are topological insulators, magnets, semimetals, and superconductors. The emergence of new particles with remarkable properties such as fractional charge and statistics is discussed alongside possible applications such as fault-tolerant topological quantum computing. Suitable as a textbook for graduate or advanced undergraduate students, or as a reference for more experienced researchers, the book assumes little prior background, providing self-contained introductions to topics as varied as phase transitions, superconductivity, and localisation.
This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity. Topological insulators are a recently discovered class of materials that possess a spin-momentum-locked surface state. Their exotic spin texture makes them an exciting platform for investigating emergent phenomena, especially when coupled with magnetism or superconductivity. Focusing on the strong correlation between electricity and magnetism in magnetic topological insulators, the author presents original findings on current-direction-dependent nonreciprocal resistance, current-induced magnetization reversal and chiral edge conduction at the domain wall. In addition, he demonstrates how the coupling between superconductivity and topological surface state leads to substantial nonreciprocal resistance. The author also elucidates the origins of these phenomena and deepens readers’ understanding of the topologically nontrivial electronic state. The book includes several works which are published in top journals and were selected for the President’s Award by the University of Tokyo and for the Ikushi Prize, awarded to distinguished Ph.D. students in Japan.
This book reviews the current state-of-the art of single layer silicene up to thicker silicon nanosheets, and their structure, properties and potential applications. Silicene is a newly discovered material that is one atomic layer think. It is a two-dimensional (2D) nanomaterial that is classified as a nanosheet, which has large lateral dimensions up to micrometres, but thicknesses of only nanometres or less. Silicon nanosheets are currently a very ‘hot’ area of research. The unique properties and morphology of such materials make them ideal for a variety of applications, including electronic devices, batteries and sensors. 2D nanosheets of silicon can be considered as analogues of graphene. As silicon is already the major component of electronic devices, the significance of nanosheets composed of silicon is that they can be more easily integrated into existing electronic devices. Furthermore, if 2D nanostructured Si can be implemented into such devices, then their size could be reduced into the nano-regime, providing unique properties different from bulk Si that is currently employed. The book is written for researchers and graduate students.
A comprehensive collection of papers on theoretical aspects of electronic processes in simple and synthetic metals, superconductors, bulk and low-dimensional semiconductors under extreme conditions, such as high magnetic and electric fields, low and ultra-low temperatures. The main emphasis is on low-dimensional conductors and superconductors, where correlated electrons, interacting with magnetic or nonmagnetic impurities, phonons, photons, or nuclear spins, result in a variety of new physical phenomena, such as quantum oscillations in the superconducting state, Condon instability, Skyrmions and composite fermions in quantum Hall effect systems, and hyperfine field-induced mesoscopic and nanoscopic phenomena. Several new experimental achievements are reported that promise to delineate future trends in low temperature and high magnetic field physics, including the experimental observation of the interplay between superconductivity and nuclear spin ordering at ultra-low temperatures, new observations of Condon domains in normal metals, and an experimental proposal for the realisation of isotopically engineered, semiconductor-based spin-qubit elements for future quantum computation and communication technology.
The Proceedings of the ICM publishes the talks, by invited speakers, at the conference organized by the International Mathematical Union every 4 years. It covers several areas of Mathematics and it includes the Fields Medal and Nevanlinna, Gauss and Leelavati Prizes and the Chern Medal laudatios.
This thesis explores several fundamental topics in mesoscopic circuitries that incorporate few electronic conduction channels. It reports a series of long-awaited experiments that establish a new state of the art. The first experiments address the quantized character of charge in circuits. We demonstrate the charge quantization criterion, observe the predicted charge quantization scaling and a crossover toward a universal behavior as temperature is increased. The second set of experiments addresses the unconventional quantum critical physics that arises in the multichannel Kondo model. We observe the predicted universal Kondo fixed points and validate the numerical renormalization group scaling curves. Away from the quantum critical point, we obtain a direct visualization of the development of a second-order quantum phase transition.