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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Scanning near-field optical microscopy (SNOM, also known as NSOM) is a new local probe technique with a resolving power of 10--50 nm. Not being limited by diffraction, near-field optics (NFO) opens new perspectives for optical characterization and the understanding of optical phenomena, in particular in biology, microelectronics and materials science. SNOM, after first demonstrations in '83/'84, has undergone a rapid development in the past two to four years. The increased interest has been largely stimulated by the wealth of optical properties that can be investigated and the growing importance of characterization on the nanometer scale in general. Examples include the use of fluorescence, birefrigence and plasmon effects for applications in particular in biology, microelectronics and materials science, to name just a few. This volume emerged from the first international meeting devoted exclusively to NFO, and comprises a complete survey of the 1992 activities in the field, in particular the variety of instrumental techniques that are currently being explored, the demonstration of the imaging capabilities as well as theoretical interpretations - a highly nontrivial task. The comprehensive collection of papers devoted to these and related subjects make the book a valuable tool for anybody interested in near-field optics.
This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time.Discusses and compares infrared, Raman, and photoluminescence methodsEnables readers to choose the best method for a given problemIllustrates applications to help non-experts and industrial users, with answers to selected common problemsPresents fundamentals with examples from the semiconductor literature without excessive abstract discussionFeatures equipment lists and discussion of techniques to help establish characterization laboratories
Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.
"This groundbreaking book focuses on near-field microscopy which has opened up optical processes at the nanoscale for direct inspection. Further, it explores the emerging area of nano-optics which promises to make possible optical microscopy with true nanometer resolution. This frontline resource helps you achieve high resolution optical imaging of biological species and functional materials. You also find guidance in the imaging of optical device operation and new nanophotonics functionalities"--EBL.
This book contains the most recent information on optical nanoscopy. Far-Field and Near-Field properties on e.m. waves are presented which illustrate how optical images can be obtained from sub-micron objects. Scanning Probe techniques and computer processing are covered here. An explanation is given on how propagating photons or evanescent waves can behave over distances shorter than the wavelength, taking into account the presence of small objects. Quantum tunneling of photons is explained comparatively with the electron mechanism. Technical details are given on photon tunneling microscopes. Typical results already obtained with these techniques are also described.
II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.
Over the last century, numerous optical techniques have been developed to characterize materials, giving insight into their optical, electronic, magnetic, and structural properties and elucidating such diverse phenomena as high-temperature superconductivity and protein folding. Optical Techniques for Solid-State Materials Characterization provides
The technological progress is closely related to the developments of various materials and tools made of those materials. Even the different ages have been defined in relation to the materials used. Some of the major attributes of the present-day age (i.e., the electronic materials’ age) are such common tools as computers and fiber-optic telecommunication systems, in which semiconductor materials provide vital components for various mic- electronic and optoelectronic devices in applications such as computing, memory storage, and communication. The field of semiconductors encompasses a variety of disciplines. This book is not intended to provide a comprehensive description of a wide range of semiconductor properties or of a continually increasing number of the semiconductor device applications. Rather, the main purpose of this book is to provide an introductory perspective on the basic principles of semiconductor materials and their applications that are described in a relatively concise format in a single volume. Thus, this book should especially be suitable as an introductory text for a single course on semiconductor materials that may be taken by both undergraduate and graduate engineering students. This book should also be useful, as a concise reference on semiconductor materials, for researchers working in a wide variety of fields in physical and engineering sciences.
Provides new or expanded coverage on the latest techniques for microelectronic failure analysis. The CD-ROM includes the complete content of the book in fully searchable Adobe Acrobat format. Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee