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This edition has been completely revised to cover the latest methods of gem enhancement and identification, as well as the most up-to-date test instruments and laboratory techniques.
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Single-crystal materials currently in the use in various fields of optoelectronics are reviewed from the viewpoint of materials science. The characteristics of crystal-line laser hosts, nonlinear optic crystals, electroptic crystals, and ultrasonic light diffraction solid media are described. The present status of crystal growth by the pulling method is discussed, and relations between the growth conditions and defects in the obtained crystals are stressed. The necessary steps in the process of device fabrication are analyzed, and some important factors such as phase diagram information, domain structure in oxide ferro-electrics, and laser damage susceptibility are pointed out. Some theoretical treatments of oxide ferroelectric crystals useful for materials scientists are reviewed.
In the last decade or so the growth of single crystals has assumed enormous importance for both academic research, and technology (particu larly in the field of 'electronics'). The range of fields involved is great: from electro-optics to metal corrosion, from semiconductors to magnetic bubble materials-one can add to the list almost indefinitely. However, while the general principles of crystal growth can be applied aImost right across the board, it turns out that the precise way in which one can grow a particular crystal best varies considerably from material to material. This, of course, is to emphasise the obvious; nonetheless, except in specialised papers in the scientific litera ture , little attempt seems to have been made to deal in any detail with the causes of the difficulties in growing particular kinds of materials and with methods of circumventing them. These specialised papers may be inaccessible, and in any case cannot be, usually, very broad in scope or detailed in treatment simply because of the pressure to keep papers short. And unfortunately few specialised monographs seem to have been produced. These points and others similar emerged repeatedly in discussions with crystal growers from aU parts of the World and indicated that there was a need for a publication which would deal in detail with problems and techniques for specialised areas of crystal growth.
Since the first date of publication of this book in 1991, the subject of phosphors and luminescence has assumed even more importance in the overall scheme of technological development. Many new types of displays have appeared which depend upon phosphors in their operation. Some of these were pure conjecture in 1991 but are a reality in 2004. Descriptions have been included of the newer (as well as the older) types of displays in this edition along with an annotated portrait of the phosphors used in each category. Many of these new light sources promise to displace and make obsolete our current light sources, such as incandescent lamps, fluorescent lamps and the ubiquitous colour Cathode Ray Tube now used in TV and computer monitors. The importance of solid state science are summarized in the introductory chapters of this edition, and many of the chapters have been completely rewritten or revised. Each chapter has a special contribution to make in the overall understanding of the solid state science of phosphors and luminescence. Introduces the reader to the science and art of preparing inorganic luminescent materials Describes how and why luminescent materials exhibit such specific intrinsic properties Describes the science of the solid state and presents the exact formulas and conditions required to make all of the phosphors known at that time
Volume 86 of Reviews in Mineralogy and Geochemistry concentrates on understanding the variations among ratios of the three isotopes of oxygen, with primary emphasis on terrestrial systems. Triple oxygen isotope variations may be related to large, mass-independent fractionation effects such observed in the Earth atmosphere or may be small and related to minute variations due to purely mass-dependent processes. Recent advancements in analytical resolution now allow for the identification of processes and distinct reservoirs that were formerly hidden in the paradigm of a "single terrestrial fractionation line". New, high-resolution measurements are accompanied by advances in theoretical calculations that dovetail with empirical calibrations and applications throughout this volume. 14 chapters span a wide range of subjects: from ab-initio theoretical approaches to observation of triple oxygen isotope variations in the Earth litho-, hydro- and atmosphere.
Crystal pulling is an industrial process and provides the bulk of semiconductor crystals for the semiconductor industry. Initially a purely empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to strengthen the interface between the practical crystal grower and the applied mathematician involved in analytical and computer modelling. Its focus is on the physics, chemistry and metallurgy of the process. From reviews: "... There is a need for a modern, non-trivial text on Czochralski growth ... and Dr. Hurle is eminently suited to write such a text."; "Dr. Hurle is probably uniquely qualified to write a book on ... (the Czochralski) growth process. ... He has published a great deal of very substantial as well as innovative work in this area."