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The increase of consumer electronics and communications applications using Radio Frequency (RF) and microwave circuits has implications for oscillator design. Applications working at higher frequencies and using novel technologies have led to a demand for more robust circuits with higher performance and functionality, but decreased costs, size and power consumption. As a result, there is also a need for more efficient oscillators. This book presents up to date information on all aspects of oscillator design, enabling a selection of the best oscillator topologies with optimized noise reduction and electrical performance. RF and Microwave Transistor Oscillator Design covers: analyses of non-linear circuit design methods including spectral-domain analysis, time-domain analysis and the quasilinear method; information on noise in oscillators including chapters on varactor and oscillator frequency tuning, CMOS voltage-controlled oscillators and wideband voltage-controlled oscillators; information on the stability of oscillations, with discussions on the stability of multi-resonant circuits and the phase plane method; optimized design and circuit techniques, beginning with the empirical and analytic design approaches, moving on to the high-efficiency design technique; general operation and design principles of oscillators, including a section on the historical aspects of oscillator configurations. A valuable reference for practising RF and Microwave designers and engineers, RF and Microwave Transistor Oscillator Design is also useful for lecturers, advanced students and research and design (R&D) personnel.
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
5G Advanced: The Next Generation Wireless Access Technology, Third Edition follows the authors' highly celebrated books on 3G and 4G by providing a new level of insight into 5G NR. After an initial discussion of the background to 5G, including requirements, spectrum aspects and the standardization timeline, all technology features of the first phase of NR are described in detail. Included is a detailed description of the NR physical-layer structure and higher-layer protocols, RF and spectrum aspects and co-existence and interworking with LTE. This book provides a good understanding of NR and the different NR technology components, giving insight into why a certain solution was selected. - Covers the entire Release 17 in detail - Includes the core elements of Release 18 - Contains three new chapters: NTN - describing NR operation over satellites (non-terrestrial networks) with a discussion on satellite communication, changes introduced in NR to support NTN operation (e.g., timing advance changes, HARQ enhancements); RedCap- describing NR reduced capability for (high-end) IoT applications; Broadcast- describing the NR broadcast operation
The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.