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One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. Fourteen chapters review the state of the art research on silicon-based materials and their applications to devices. This reference contains a subset of articles published in AP's recently released Handbook of Advanced Electronic and Photonic Materials and Devices ( 2000, ISBN 012-5137451, ten volumes) by Dr. Hari Nalwa. This two-volume work strives to present a highly coherent coverage of silicon-based material uses in the vastly dynamic arena of silicon chip research and technology. Key Features * Covers silicon-based materials and devices * Include types of materials, their processing, fabrication, physical properties and device applications * Role of silicon-based materials in electronic and photonic technology * A very special topic presented in a timely manner and in a format
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Even though reports suggest that the silicon share will slowly decrease in the next twenty years, finding a way to manufacture a specific solar grade feedstock in large quantities, at a low cost while maintaining the quality needed, still remains a crucial issue. Thin film and quantum confinement-based silicon cells might be a complementary solution. Advanced Silicon Materials for Photovoltaic Applications has been designed to describe the full potentialities of silicon as a multipurpose material and covers: Physical, chemical and structural properties of silicon Production routes including the promise of low cost feedstock for PV applications Defect engineering and the role of impurities and defects Characterization techniques, and advanced analytical techniques for metallic and non-metallic impurities Thin film silicon and thin film solar cells Innovative quantum effects, and 3rd generation solar cells With contributions from internationally recognized authorities, this book gives a comprehensive analysis of the state-of-the-art of process technologies and material properties, essential for anyone interested in the application and development of photovoltaics.
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
Handbook of Silicon Based MEMS Materials and Technologies, Third Edition is a comprehensive guide to MEMS materials, technologies, and manufacturing with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, modeling, manufacturing, processing, system integration, measurement, and materials characterization techniques of MEMS structures. The third edition of this book provides an important up-to-date overview of the current and emerging technologies in MEMS making it a key reference for MEMS professionals, engineers, and researchers alike, and at the same time an essential education material for undergraduate and graduate students. - Provides comprehensive overview of leading-edge MEMS manufacturing technologies through the supply chain from silicon ingot growth to device fabrication and integration with sensor/actuator controlling circuits - Explains the properties, manufacturing, processing, measuring and modeling methods of MEMS structures - Reviews the current and future options for hermetic encapsulation and introduces how to utilize wafer level packaging and 3D integration technologies for package cost reduction and performance improvements - Geared towards practical applications presenting several modern MEMS devices including inertial sensors, microphones, pressure sensors and micromirrors