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Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Optoelectronic devices transform electrical signals into optical signals (and vice versa) by utilizing the interaction of electrons and light. Advanced software tools for the design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help the reader to better understand internal device physics. Real-world devices such as edge-emitting or surface-emitting laser diodes, light-emitting diodes, solar cells, photodetectors, and integrated optoelectronic circuits are investigated. The software packages described in the book are available to the public, on a commercial or noncommercial basis, so that the interested reader is quickly able to perform similar simulations.
While measuring the effectiveness of solar cell materials may not always be practical once a device has been created, solar cell modeling may allow researchers to obtain prospective analyses of the internal processes of potential materials prior to their manufacture. Advanced Solar Cell Materials, Technology, Modeling, and Simulation discusses the development and use of modern solar cells made from composite materials. This volume is targeted toward experts from universities and research organizations, as well as young professionals interested in pursuing different subjects regarding advanced solar cells.
Since the publication of the first edition in 1982, the goal of Simulation Modeling and Analysis has always been to provide a comprehensive, state-of-the-art, and technically correct treatment of all important aspects of a simulation study. The book strives to make this material understandable by the use of intuition and numerous figures, examples, and problems. It is equally well suited for use in university courses, simulation practice, and self study. The book is widely regarded as the “bible” of simulation and now has more than 100,000 copies in print. The book can serve as the primary text for a variety of courses; for example: • A first course in simulation at the junior, senior, or beginning-graduate-student level in engineering, manufacturing, business, or computer science (Chaps. 1 through 4, and parts of Chaps. 5 through 9). At the end of such a course, the students will be prepared to carry out complete and effective simulation studies, and to take advanced simulation courses. • A second course in simulation for graduate students in any of the above disciplines (most of Chaps. 5 through 12). After completing this course, the student should be familiar with the more advanced methodological issues involved in a simulation study, and should be prepared to understand and conduct simulation research. • An introduction to simulation as part of a general course in operations research or management science (part of Chaps. 1, 3, 5, 6, and 9).
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. Gives a broad overview of concepts with concise explanations illustrated by real results. Compares different levels of modeling, from simple analytical models to complex numerical models. Discusses practical methods of model validation. Includes an overview of numerical techniques.