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Quantitative understanding of the parasitic capacitances and inductances, and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of-the-art integrated circuits. More than 65 percent of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Mathematical techniques to model the parasitic capacitances, inductances, propagation delays, crosstalk noise, and electromigration-induced failure associated with the interconnections in the realistic high-density environment on a chip will be discussed. A One-Semester Course in Modeling of VLSI Interconnections also includes an overview of the future interconnection technologies for the nanotechnology circuits.
The optimum design of state-of-the-art integrated circuits relies heavily on quantitative understanding of the parasitic capacitances and inductances in the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrate circuits (VSLI). This is because more than 65% of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Modeling of VSLI Interconnections will discuss the mathematical techniques necessary to model the parasitic capacitances, inductances, propagation delays, crosstalk noise and electro migration-induced failure associated with the interconnections in the realistic high-density environment on a chip. This book will be the first of its kind written for a one-semester course on the mathematical modeling of metallic interconnections on a VLSI circuit. In most institutions around the world, this course will be offered at an upper-level undergraduate and beginning graduate level. The book will also be of interest to practicing engineers in the field who are looking for a quick refresher on the subject.
This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.
Modeling and Simulation of High Speed VLSI Interconnects brings together in one place important contributions and state-of-the-art research results in this rapidly advancing area. Modeling and Simulation of High Speed VLSI Interconnects serves as an excellent reference, providing insight into some of the most important issues in the field.
The second edition of this comprehensive text contains extensive revisions to reflect recent advances in technology and in circuit design practices. Recognizing that the area of digital integrated circuit design is evolving at an increasingly fast pace, every effort has been made to present state-of-the-art material on all subjects covered in the book. This book is primarily designed as a comprehensive text for senior level and first-year graduate level digital circuit design classes, as well as a reference for practicing engineers in the areas of IC design and VLSI.
2.1 Text Summarization “Text summarization is the process of distilling the most important information from a source (or sources) to produce an abridged version for a particular user (or users) and task (or tasks)” [3]. Basic and classical articles in text summarization appear in “Advances in automatic text summarization” [3]. A literature survey on information extraction and text summarization is given by Zechner [7]. In general, the process of automatic text summarization is divided into three stages: (1) analysis of the given text, (2) summarization of the text, (3) presentation of the summary in a suitable output form. Titles, abstracts and keywords are the most common summaries in Academic papers. Usually, the title, the abstract and the keywords are the first, second, and third parts of an Academic paper, respectively. The title usually describes the main issue discussed in the study and the abstract presents the reader a short description of the background, the study and its results. A keyword is either a single word (unigram), e.g.: ‘learning', or a collocation, which means a group of two or more words, representing an important concept, e.g.: ‘machine learning', ‘natural language processing'. Retrieving collocations from text was examined by Smadja [5] and automatic extraction of collocations was examined by Kita et al. [1].