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This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​
With the growing demands for high frequency, high temperature, and high power density applications in power electronics industry, silicon is reaching its theoretical limits. Wide band gap materials, such as GaN and SiC, have become the most popular successor candidates to keep "More than Moore" alive, due to their superior properties and mature technological process. However, there are many design challenges for driving GaN power transistors, including tight restriction on the gate voltage, EMI and reliability issues due to the large dv/dt and di/dt slew rates, the precision timing control, etc. In this thesis, an integrated smart gate driver IC with segmented output stage topology, programmable sense-FET, current sensing circuits and an on-chip stacked-based CPU for flexible digital control is presented. This IC is fabricated using TSMC's 0.18 um BCD GEN2 technology process for driving a d-mode GaN power HEMT in cascode configuration. The embedded CPU can configure all the digital control bits on-the-fly, with only 6 I/O pins. By using segmentation technique, this IC can suppress gate voltage spike and achieve switching node slope control. Compared with conventional fixed ROUT driving scheme, the gate voltage overshoot during transition is reduced by 89% with a load current of 5 A. In an 8 V to 15 V, 7.5 W boost converter operating at 1 MHz, an average EMI reduction of 4.43 dB is achieved between 40 MHz to 200 MHz, by utilizing dynamic driving strategy. When fSW = 2 MHz, the overall power conversion efficiency is improved by 6% at the rated output power. The programmable sense-FET and current sensing circuit can provide peak-current detection with a response time of 26 ns. This IC has many other add-on functions, including the active driving mode, which can change the best driving pattern on-the-fly. Compared to conventional gate drivers, the proposed driver IC offers a fully integrated solution, which eliminates the need for external controller, addition passive components, and analog circuit building for close loop regulation. System volume is reduced, while the design exibility is greatly improved.
This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
This book presents select proceedings of the International Conference on Science, Technology and Engineering (ICSTE 2023) related to electrical and electronic engineering. Various topics covered include neural network classification, text detection from natural scene images, speech processing systems, Wi-Fi intrusion detection, machine learning, wireless sensor network, image retrieval, automatic speech recognition, device physics, power transfer, photovoltaics, antenna for ultra-wideband applications, electric vehicles, etc. The book is useful for researchers and professionals whose work involves electrical and electronics and computer science fields.