Download Free A Contribution To The Study Of Extended Defects In Semiconductors Book in PDF and EPUB Free Download. You can read online A Contribution To The Study Of Extended Defects In Semiconductors and write the review.

The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts