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The proceedings present a selection of refereed papers presented at the 1st International Conference on Electronic Engineering and Renewable Energy (ICEERE 2018) held during 15-17 April 2018, Saidi, Morocco. The contributions from electrical engineers and experts highlight key issues and developments essential to the multifaceted field of electrical engineering systems and seek to address multidisciplinary challenges in Information and Communication Technologies. The book has a special focus on energy challenges for developing the Euro-Mediterranean regions through new renewable energy technologies in the agricultural and rural areas. The book is intended for academia, including graduate students, experienced researchers and industrial practitioners working in the fields of Electronic Engineering and Renewable Energy.
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Low Power Consumption is one of the critical issues in the performance of small battery-powered handheld devices. Mobile terminals feature an ever increasing number of wireless communication alternatives including GPS, Bluetooth, GSM, 3G, WiFi or DVB-H. Considering that the total power available for each terminal is limited by the relatively slow increase in battery performance expected in the near future, the need for efficient circuits is now critical. This book presents the basic techniques available to design low power RF CMOS analogue circuits. It gives circuit designers a complete guide of alternatives to optimize power consumption and explains the application of these rules in the most common RF building blocks: LNA, mixers and PLLs. It is set out using practical examples and offers a unique perspective as it targets designers working within the standard CMOS process and all the limitations inherent in these technologies.
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a
The book provides the broad knowledge on electromigration techniques including: theory of CE, description of instrumentation, theory and practice in micellar electrokinetic chromatography, isotachophoresis, capillary isoelectric focusing, capillary and planar electrochromatography (including description of instrumentation and packed and monolithic column preparation), 2D-gel electrophoresis (including sample preparation) and lab-on-a-chip systems. The book also provides the most recent examples of applications including food, environmental, pharmaceutical analysis as well as proteomics.
SAW devices are widely used in multitude of device concepts mainly in MEMS and communication electronics. As such, SAW based micro sensors, actuators and communication electronic devices are well known applications of SAW technology. For example, SAW based passive micro sensors are capable of measuring physical properties such as temperature, pressure, variation in chemical properties, and SAW based communication devices perform a range of signal processing functions, such as delay lines, filters, resonators, pulse compressors, and convolvers. In recent decades, SAW based low-powered actuators and microfluidic devices have significantly added a new dimension to SAW technology. This book consists of 20 exciting chapters composed by researchers and engineers active in the field of SAW technology, biomedical and other related engineering disciplines. The topics range from basic SAW theory, materials and phenomena to advanced applications such as sensors actuators, and communication systems. As such, in addition to theoretical analysis and numerical modelling such as Finite Element Modelling (FEM) and Finite Difference Methods (FDM) of SAW devices, SAW based actuators and micro motors, and SAW based micro sensors are some of the exciting applications presented in this book. This collection of up-to-date information and research outcomes on SAW technology will be of great interest, not only to all those working in SAW based technology, but also to many more who stand to benefit from an insight into the rich opportunities that this technology has to offer, especially to develop advanced, low-powered biomedical implants and passive communication devices.