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This book explains for readers how 3D chip stacks promise to increase the level of on-chip integration, and to design new heterogeneous semiconductor devices that combine chips of different integration technologies (incl. sensors) in a single package of the smallest possible size. The authors focus on heterogeneous 3D integration, addressing some of the most important challenges in this emerging technology, including contactless, optics-based, and carbon-nanotube-based 3D integration, as well as signal-integrity and thermal management issues in copper-based 3D integration. Coverage also includes the 3D heterogeneous integration of power sources, photonic devices, and non-volatile memories based on new materials systems.
Our report on 3D stacked memory technology covers the Intellectual Property (Patent) landscape of this rapidly evolving technology and monitors its various sub-domains for licensing activity. We have analyzed the IP portfolios of SanDisk, Micron, Samsung, IBM and other major players to find the focus areas of their patenting efforts. Using our proprietary patent analytics tool, LexScore™, we identify the front runners in this technology domain with strong patent portfolio quality as well as a heavy patent filing activity. Using our proprietary Licensing Heat-map framework, we also predict licensing activity trend in various technology sub domains.
This fourth volume of the landmark handbook focuses on the design, testing, and thermal management of 3D-integrated circuits, both from a technological and materials science perspective. Edited and authored by key contributors from top research institutions and high-tech companies, the first part of the book provides an overview of the latest developments in 3D chip design, including challenges and opportunities. The second part focuses on the test methods used to assess the quality and reliability of the 3D-integrated circuits, while the third and final part deals with thermal management and advanced cooling technologies and their integration.
The first encompassing treatise of this new and very important field puts the known physical limitations for classic 2D microelectronics into perspective with the requirements for further microelectronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The editors have assembled contributions from key academic and industrial players in the field, including Intel, Micron, IBM, Infineon, Qimonda, NXP, Philips, Toshiba, Semitool, EVG, Tezzaron, Lincoln Labs, Fraunhofer, RPI, IMEC, CEA-LETI and many others.
The latest advances in three-dimensional integrated circuit stacking technology With a focus on industrial applications, 3D IC Stacking Technology offers comprehensive coverage of design, test, and fabrication processing methods for three-dimensional device integration. Each chapter in this authoritative guide is written by industry experts and details a separate fabrication step. Future industry applications and cutting-edge design potential are also discussed. This is an essential resource for semiconductor engineers and portable device designers. 3D IC Stacking Technology covers: High density through silicon stacking (TSS) technology Practical design ecosystem for heterogeneous 3D IC products Design automation and TCAD tool solutions for through silicon via (TSV)-based 3D IC stack Process integration for TSV manufacturing High-aspect-ratio silicon etch for TSV Dielectric deposition for TSV Barrier and seed deposition Copper electrodeposition for TSV Chemical mechanical polishing for TSV applications Temporary and permanent bonding Assembly and test aspects of TSV technology
This book presents the research challenges that are due to the introduction of the 3rd dimension in chips for researchers and covers the whole architectural design approach for 3D-SoCs. Nowadays the 3D-Integration technologies, 3D-Design techniques, and 3D-Architectures are emerging as interesting, truly hot, broad topics. The present book gathers the recent advances in the whole domain by renowned experts in the field to build a comprehensive and consistent book around the hot topics of three-dimensional architectures and micro-architectures. This book includes contributions from high level international teams working in this field.
Discover an up-to-date exploration of Embedded and Fan-Out Waver and Panel Level technologies In Embedded and Fan-Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces: High Performance Compute and System-in-Package, a team of accomplished semiconductor experts delivers an in-depth treatment of various fan-out and embedded die approaches. The book begins with a market analysis of the latest technology trends in Fan-Out and Wafer Level Packaging before moving on to a cost analysis of these solutions. The contributors discuss the new package types for advanced application spaces being created by companies like TSMC, Deca Technologies, and ASE Group. Finally, emerging technologies from academia are explored. Embedded and Fan-Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces is an indispensable resource for microelectronic package engineers, managers, and decision makers working with OEMs and IDMs. It is also a must-read for professors and graduate students working in microelectronics packaging research.
Wafer-scale integration has long been the dream of system designers. Instead of chopping a wafer into a few hundred or a few thousand chips, one would just connect the circuits on the entire wafer. What an enormous capability wafer-scale integration would offer: all those millions of circuits connected by high-speed on-chip wires. Unfortunately, the best known optical systems can provide suitably ?ne resolution only over an area much smaller than a whole wafer. There is no known way to pattern a whole wafer with transistors and wires small enough for modern circuits. Statistical defects present a ?rmer barrier to wafer-scale integration. Flaws appear regularly in integrated circuits; the larger the circuit area, the more probable there is a ?aw. If such ?aws were the result only of dust one might reduce their numbers, but ?aws are also the inevitable result of small scale. Each feature on a modern integrated circuit is carved out by only a small number of photons in the lithographic process. Each transistor gets its electrical properties from only a small number of impurity atoms in its tiny area. Inevitably, the quantized nature of light and the atomic nature of matter produce statistical variations in both the number of photons de?ning each tiny shape and the number of atoms providing the electrical behavior of tiny transistors. No known way exists to eliminate such statistical variation, nor may any be possible.