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This significant and uniquely comprehensive five-volume reference is a valuable source for research workers, practitioners, computer scientists, students, and technologists. It covers all of the major topics within the subject and offers a comprehensive treatment of MEMS design, fabrication techniques, and manufacturing methods. It also includes current medical applications of MEMS technology and provides applications of MEMS to opto-electronic devices. It is clearly written, self-contained, and accessible, with helpful standard features including an introduction, summary, extensive figures and design examples with comprehensive reference lists.
Hybrid Systems-in-Foil (HySiF) is a concept that extends the potential of conventional More-than-More Systems-in/on-Package (SiPs and SoPs) to the flexible electronics world. In HySiF, an economical implementation of flexible electronic systems is possible by integrating a minimum number of embedded silicon chips and a maximum number of on-foil components. Here, the complementary characteristics of CMOS SoCs and larger area organic and printed electronics are combined in a HySiF-compatible polymeric substrate. Within the HySiF scope, the fabrication process steps and the integration design rules with all the accompanying boundary conditions concerning material compatibility, surface properties, and thermal budget, are defined. This Element serves as an introduction to the HySiF concept. A summary of recent ultra-thin chip fabrication and flexible packaging techniques is provided. Several bendable electronic components are presented demonstrating the benefits of HySiF. Finally, prototypes of flexible wireless sensor systems that adopt the HySiF concept are demonstrated.
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
It's hard to imagine any device more crucial to modern life than the microchip and the transistor from which it sprang. Every waking hour of every day people benefit from its use in cellular phones, computers, radios, TVs, and ATMs. This eloquent retelling of the story behind the invention of the transistor recounts how pride and jealousy coupled with scientific aspirations ignited the greatest technological explosion in history. Photos & drawings.
The 2nd volume of 'Advances in Microelectronics: Reviews' Book Series is written by 57 contributors from academy and industry from 11 countries (Bulgaria, Hungary, Iran, Japan, Malaysia, Romania, Russia, Slovak Republic, Spain, Ukraine and USA). The book contains 13 chapters from different areas of microelectronics: MEMS, materials characterization, and various microelectronic devices. With unique combination of information in each volume, the Book Series will be of value for scientists and engineers in industry and at universities. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Surface science has existed as a recognized discipline for more than 20 years. During this period, the subject has expanded in two important ways. On the one hand, the techniques available for studying surfaces, both experimental and theoretical, have grown in number and in sophistication. On the other hand, surface science has been applied to an increasing number of areas of technology, such as catalysis, semicon ductor processing, new materials development, corrosion prevention, adhesion and tribology. . There is, however, no sharp division between fundamental and applied surface science. New techniques can immediately be applied to technologically important problems. Improvements in understanding of fundamental phenomena such as epi taxial growth of one metal on another, or the bonding of hydrocarbons to metal sur faces, to name just two examples, have direct consequences for technology. Surface science has also become very much an interdisciplinary subject; physics, chemistry, materials science, chemical and electronical engineering all draw upon and contribute to surface science. The intimate relationship between principles and applications of surface science forms the theme of this proceedings volume. The contributions were all presented as invited lectures at an Australian-German Workshop on Surface Science held at Coogee Beach, Sydney, Australia, in December 1991. The contributors, all active surface scientists in their respective countries, were asked to highlight recent develop ments in their own areas of activity involving new techniques, advances in funda mental understanding or new applications in technology.
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.