Download Free 2014 Compound Semiconductor Mantech Digest Book in PDF and EPUB Free Download. You can read online 2014 Compound Semiconductor Mantech Digest and write the review.

Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
This book describes for readers the entire, interconnected complex of theoretical and practical aspects of designing and organizing the production of various electronic devices, the general and main distinguishing feature of which is the high speed of processing and transmitting of digital signals. The authors discuss all the main stages of design - from the upper system level of the hierarchy (telecommunications system, 5G mobile communications) to the lower level of basic semiconductor elements, printed circuit boards. Since the developers of these devices in practice deal with distorted digital signals that are transmitted against a background of interference, the authors not only explain the physical nature of such effects, but also offer specific solutions as to how to avoid such parasitic effects, even at the design stage of high-speed devices.
Developments in Surface Contamination and Cleaning: Applications of Cleaning Techniques, Volume Eleven, part of the Developments in Surface Contamination and Cleaning series, provides a guide to recent advances in the application of cleaning techniques for the removal of surface contamination in various industries, such as aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. The material in this new edition compiles cleaning applications into one easy reference that has been fully updated to incorporate new applications and techniques. Taken as a whole, the series forms a unique reference for professionals and academics working in the area of surface contamination and cleaning. Presents the latest reviewed technical information on precision cleaning applications as written by established experts in the field Provides a single source on the applications of innovative precision cleaning techniques for a wide variety of industries Serves as a guide to the selection of precision cleaning techniques for specific applications
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots