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Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
The 24th Symposium attracted over 250 submissions, predominantly on growth and characterization. Compound semiconductors have become pervasive in applications that are unique and could not be addressed in any other viable manner, such as laser diodes in compact disk players, high brightness LEDs in automotive tail lights, low noise and low power amplifiers in cellular phones, infra-red diodes in remote controls, low noise amplifier front ends in televisions, and the recent high-brightness blue LEDs. Many of the contributions that engendered these novel products were first reported at the International Symposium on Compound Semiconductors. The procceedings of this conferences are an essential reference for all researchers in semiconductor physics, optoelectronics, electronic and electrical engineering, researching the properties and applications of compound materials.
An international perspective on the latest research, Compound Semiconductors 1999 presents an overview of important developments in all III-V compound semiconductors such as GaAs, InP, and GaN; II-VI compounds such as ZnS, ZnSe, and CdTe; IV-IV compounds such as SiC and SiGe; and IV-VI compounds such as PbTe and SnTe. The book emphasizes piezoelectric (or potentially smart) material heterostructures (Ga, Al, In)N, which will influence future research and development funding. As the preeminent forum for research in compound materials and their applications in devices, this essential library reference is invaluable reading for all researchers in semiconductor physics, and electronic and electrical engineering.
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
This text constitutes the proceedings from the 25th IEEE International Symposium on Compound Semiconductors, which took place in 2000. Topics covered include emitter science and technology, heterostructure devices and quantum effect materials and devices.
The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.
The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw