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Früher u.d.T.: Institute of Electrical and Electronics Engineers: The new IEEE standard dictionary of electrical and electronics terms.
Throughout most of the twentieth century, electric propulsion was considered the technology of the future. Now, the future has arrived. This important new book explains the fundamentals of electric propulsion for spacecraft and describes in detail the physics and characteristics of the two major electric thrusters in use today, ion and Hall thrusters. The authors provide an introduction to plasma physics in order to allow readers to understand the models and derivations used in determining electric thruster performance. They then go on to present detailed explanations of: Thruster principles Ion thruster plasma generators and accelerator grids Hollow cathodes Hall thrusters Ion and Hall thruster plumes Flight ion and Hall thrusters Based largely on research and development performed at the Jet Propulsion Laboratory (JPL) and complemented with scores of tables, figures, homework problems, and references, Fundamentals of Electric Propulsion: Ion and Hall Thrusters is an indispensable textbook for advanced undergraduate and graduate students who are preparing to enter the aerospace industry. It also serves as an equally valuable resource for professional engineers already at work in the field.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.