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For next generation MOSFETs, the constant field scaling rule dictates a reduction in the gate oxide thickness among other parameters. Consequently, gate leakage current becomes a serious issue with very thin SiO2 that is conventionally used as gate dielectric since it is the native oxide for Si substrate. This has driven an industry wide search for suitable alternate 'high-k' gate dielectric that has a high value of relative permittivity compared to SiO2 thereby presenting a physically thicker barrier for tunneling carriers while providing a high gate capacitance. Consequently, it is essential to study the properties of these novel materials and the interfaces that they form with the substrate, gate or other dielectrics in a multi-level stack. The main focus of this work is the 1/f noise that is specifically used as a characterization tool to evaluate the performance of high-k MOSFETs. Nevertheless, DC and split C-V characterization are done as well to obtain device performance parameters that are used in the noise analysis. At first, the room temperature 1/f noise characteristics are presented for n- and p-channel poly-Si gated MOSFETs with three different gate dielectrics- HfO2, Al2O3 (top layer)/HfO2 (bottom layer), HfAlOx. The devices had either 1 nm or 4 nm SiO2 interfacial layer, thus presenting an opportunity to understand the effects of interfacial layer thickness on noise and carrier mobility. In the initial study, the analysis of noise is done based on the Unified Flicker Noise Model. Next, a comparative study of 1/f noise behavior is presented for TaSiN (NMOS) and TiN (PMOS) gated MOSFETs with HfO2 gate dielectric and their poly-Si gated counterparts. Additionally, in TaSiN MOSFETs, the effect of the different deposition methods employed for interfacial layer formation on the overall device performance is studied. Finally, the 'Multi-Stack Unified Noise' model (MSUN) is proposed to better model/characterize the 1/f noise in multi-layered high-k MOSFETs. This model takes the non-uniform trap density profile and other physical properties of the constituent gate dielectrics into account. The MSUN model is shown to be in excellent agreement with the experimental data obtained on TaSiN/HfO 2/SiO2 MOSFETs in the 78-350 K range. Additionally, the MSUN model is expressed in terms of surface potential based parameters for inclusion in to the circuit simulators.
A new 1/f noise model has been developed for MOSFET devices with high-kappa gate stack. To investigate the impacts of nitridation, MOSFETs with nitrided high-kappa dielectric was used. These devices were provided by Texas Instruments, having four different interfacial layer thicknesses with a stack composition of SiON/HfSiON. The dominant mechanism affecting the noise behavior of these devices was experimentally determined to be correlated number and mobility fluctuation. The impact of remote phonon scattering was investigated in the temperature range of 172K to 300K. It has been observed that the mobility characteristics of these devices were significantly affected by remote phonon scattering. However, the impact of remote phonon scattering was not observed on the flicker noise characteristics. The new model was developed in the frame work of the original Unified Model incorporating two distinct features that distinguish high-kappa gate stacks from SiO2. The new model considers energy and spatial dependence of trap distribution in the dielectric, thus generates a more realistic trap profile. Furthermore, it incorporates the multi layered structure of the gate stack by considering tunneling of carriers through a double step cascaded barrier. The newly developed model is accordingly called MSUN (Multi Stack Unified Noise) Model, named after the original Unified Model. MSUN Model has been successfully verified with data on MOSFETs having four different interfacial layer thicknesses, in the temperature range of 172K to 300K. The model predictions show very good agreement with data in the bias range of moderate to strong inversion. No specific impact due to nitridation was observed on these devices. The model has been successfully transformed into a compact form which is compatible with leading device simulation package used in the industry.
This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k materials are used instead of silicon dioxide as the insulating material underneath the gate. High-k dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.Among various high-k materials, Hafnium oxide (HfO2), Tantalum pent oxide (Ta2O5) these materials appear to be the candidates for replacing silicon oxide. These high-k dielectrics exhibit a trend of decreasing barrier height with increasing dielectric constant.The high-k materials with far higher permittivity create same gate capacitance for thicker dielectric. In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub threshold surface potential of a short-channel DMG MOS transistor with a uniformly-doped channel.
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.